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Differentially Strained P-Doped Quantum well Infrared Photodetector

Published online by Cambridge University Press:  15 February 2011

R.T. Kuroda  and
E. Garmire
R.T. Kuroda
Affiliation:
Center for Laser Studies, University of Southern California Los Angeles, California, 90089–1112, U.S.A.
E. Garmire
Affiliation:
Center for Laser Studies, University of Southern California Los Angeles, California, 90089–1112, U.S.A.
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Abstract

In this paper, we discuss a differentially strained p-doped quantum well infrared photodetector that achieves high performance specifications. We examine key device specifications for a 9 and 18 μm infrared detector. We calculate that through differential strain, these novel detectors have improved gain and substantially reduced dark current over previous quantum well infrared photodetectors, while being able to detect normal incident light.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 299: Symposium C2 – Infrared Detectors--Materials, Processing, and Devices , 1994 , 15
Copyright
Copyright © Materials Research Society 1994

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