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Dielectric Properties of Spray Deposited BaTiO3 and Ba0.68Sr0.32TiO3

Published online by Cambridge University Press:  17 March 2011

Kipyung Ahn
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
Bruce W. Wessels
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
Robert Greenlaw
Affiliation:
Integrated Coating Solutions, Huntington Beach, CA
Sanjay Sampath
Affiliation:
Department of Materials Science and Engineering, SUNY-Stony Brook, Stony Brook, NY 11794
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Abstract

The microstructure and dielectric properties of BaTiO3 and Ba0.68Sr0.32TiO3 thick films deposited by thermal spray were investigated. The as-deposited films were predominantly crystalline with a small amount of an amorphous second phase. The as-deposited BaTiO3 films had dielectric constants as high as 240 at room temperature. Upon annealing in air at 500°C, the dielectric constant increased to 480. This increase in dielectric constant was attributed, in part, to the crystallization of the amorphous second phase. The stabilized phase depended on the spray process used. The high velocity oxy fuel (HVOF) spray process resulted in the deposition of paraelectric BaTiO3, whereas the plasma spray process resulted in the ferroelectric phase.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

REFERENCES

1. Kulkarni, A., Sampath, S., Goland, A., Herman, H., Dowd, B., Scripta Mater. 43 (2000) 471 Google Scholar
2. Ctibor, P., Sedlacek, J., J. Eur. Ceram. Soc. 21 (2001) 1685 Google Scholar
3. Church, K. H., Fore, C., Feeley, T., Materials Development for Direct Write technologies, San Francisco, U.S.A., April 24-26, 2000, Mat. Res. Soc. Symp. Proc. 624 (2000) 3 Google Scholar
4. Sampath, S., Herman, H., Patel, A., Gambino, R., Greenlaw, R., Tormey, E., Materials Development for Direct Write technologies, San Francisco, U.S.A., April 24-26, 2000, Mat. Res. Soc. Symp. Proc. 624 (2000) 181Google Scholar
5. Arlt, G., Ferroelectrics 104 (1990) 217 Google Scholar
6. Krupanidhi, S. B., Peng, C. J., Thin Soild Films 305 (1997) 144 Google Scholar
7. Arlt, G., Hennings, D., With, G., J. Appl. Phys. 58 (4) (1985) 1619 Google Scholar
8. Frey, M. H., Payne, D. A., Phys. Rev. B 54 (5) (1996) 3158 Google Scholar