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Dielectric Properties of Bi2Ti2O7 Thin Films With (111) Orientation

Published online by Cambridge University Press:  10 February 2011

Zhuo Wang ,
J. Huang ,
S.W. Wang ,
X.X. Hong ,
Y. Hou ,
M. Wang ,
S.X. Shang ,
H. Wang ,
X.B. Hu  and
Yuguo Wang
Zhuo Wang
Affiliation:
State Key Lab. of Crystal Materials, Jinan 250100, China Institute of Crystal Materials Shandong University, Jinan 250100 China
J. Huang
Affiliation:
Department of Environment and Engineering, Shandong University, Jinan 250100, China.
S.W. Wang
Affiliation:
State Key Lab. of Crystal Materials, Jinan 250100, China Institute of Crystal Materials Shandong University, Jinan 250100 China
X.X. Hong
Affiliation:
State Key Lab. of Crystal Materials, Jinan 250100, China Institute of Crystal Materials Shandong University, Jinan 250100 China
Y. Hou
Affiliation:
State Key Lab. of Crystal Materials, Jinan 250100, China Institute of Crystal Materials Shandong University, Jinan 250100 China
M. Wang
Affiliation:
State Key Lab. of Crystal Materials, Jinan 250100, China Institute of Crystal Materials Shandong University, Jinan 250100 China
S.X. Shang
Affiliation:
Department of Environment and Engineering, Shandong University, Jinan 250100, China.
H. Wang
Affiliation:
State Key Lab. of Crystal Materials, Jinan 250100, China Institute of Crystal Materials Shandong University, Jinan 250100 China
X.B. Hu
Affiliation:
State Key Lab. of Crystal Materials, Jinan 250100, China Institute of Crystal Materials Shandong University, Jinan 250100 China
Yuguo Wang
Affiliation:
Department of Physics, George Washington University, Washington D.C., 20052, U.S.A. E-mail: [email protected]
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Abstract

Bismuth titanate thin films have been prepared on silicon by metalorganic decompositionMOD) technique with bismuth nitrate and titanium butoxide as source materials. The growth procedure of the Bi2Ti2O7 thin films is discussed in this paper. The surface morphology of the Bi2Ti2O7 film was investigated by using Electric Force Microscope (EFM), and the crystallization of the films was studied by x-ray diffraction (XRD). Bismuth titanate thin film prepared on (100) silicon substrate showed strong (111) orientation. Its dielectric properties and the current-voltage (I-V) characteristics were measured. The dielectric constant of the Bi2Ti2O7 thin films vs. frequency, in the temperature range of 100-800 °C, were studied. The dielectric constant and the dielectric loss for Bi2Ti2O7 are 118 and 0.07 respectively at 100KHz. For the Bi2Ti2O7 films with 0.4µm in thickness annealed at 580 °C for 40 minutes, their leakage current density is 4.06×10−7 A/cm2 at an applied voltage of 15V.

The ferroelectric phase transition has been observed distinctly and the Curie temperature was determined for the Bi2Ti2O7 ceramic films. Capacitance vs. temperature was measured from 27-800 at 1KHz, 100KHz, 100KHz and 1MHz.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 592 , 1999 , 135
Copyright
Copyright © Materials Research Society 2000

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References

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