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Dielectric Permittivity Mapping up to 9GHz Region with Non-contact Microwave Probe for Ferroelectric Device

Published online by Cambridge University Press:  26 February 2011

Hirofumi Kakemoto
Affiliation:
[email protected], Tokyo Institute of Technology, Graduate school of Science and Engineering, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8552, Japan, +81-3-5734-2829, +81-3-5734-2514
Jianyong Li
Affiliation:
[email protected], Tokyo Institute of Technology, Graduate school of Science and Engineering, 2-12-1 Ookayama, Meguro, Tokyo, 152-8552, Japan
Takakiyo Harigai
Affiliation:
[email protected], Tokyo Institute of Technology, Graduate school of Science and Engineering, 2-12-1 Ookayama, Meguro, Tokyo, 152-8552, Japan
Song-Min Nam
Affiliation:
[email protected], Tokyo Institute of Technology, Graduate school of Science and Engineering, 2-12-1 Ookayama, Meguro, Tokyo, 152-8552, Japan
Satoshi Wada
Affiliation:
[email protected], Tokyo Institute of Technology, Graduate school of Science and Engineering, 2-12-1 Ookayama, Meguro, Tokyo, 152-8552, Japan
Takaaki Tsurumi
Affiliation:
[email protected], Tokyo Institute of Technology, Graduate school of Science and Engineering, 2-12-1 Ookayama, Meguro, Tokyo, 152-8552, Japan
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Abstract

Direct observations for high frequency microscopic dielectric distributions in cross sections of a multi-layer ceramic capacitor were carried out using non-contact type microwave probe. The measured data were imaged from the raw data and rounding data process. Using microwave reflection intensity mappings from cross sections of multi-layer ceramic capacitor, the dielectric permittivity distribution in micro-region of a multi-layer ceramic capacitor was measured at room temperature. The spatial resolution was experimentally estimated to be about 10 μm from mappings of the dielectric and inner electrode layers in a multi-layer ceramic capacitor.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

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