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Dielectric Gradient Force Actuation with on-chip electrode and Free-Space Optical Measurement of SiNx Nanomechanical Resonator

Published online by Cambridge University Press:  30 March 2012

Sungwan Cho ,
Myung Rae Cho ,
Seung-Bo Shim  and
Yun Daniel Park
Sungwan Cho
Affiliation:
Department of Physics and Astronomy, Seoul National Universtiy, Seoul, 151-747, Republic of Korea. Korea Research Institute of Standards and Science, Daejeon, 305-340, Republic of Korea.
Myung Rae Cho
Affiliation:
Department of Physics and Astronomy, Seoul National Universtiy, Seoul, 151-747, Republic of Korea.
Seung-Bo Shim
Affiliation:
Korea Research Institute of Standards and Science, Daejeon, 305-340, Republic of Korea.
Yun Daniel Park
Affiliation:
Department of Physics and Astronomy, Seoul National Universtiy, Seoul, 151-747, Republic of Korea.
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Abstract

Nanomechanical resonators made from silicon nitride with residual stress is actuated using dielectric field gradient force. Doubly clamped nanomechanical resonators are made from SiNx-SiO2-Si tri-layer substrate and DC electric field induces a temporary dipole moment while a small AC electric field drives beam resonator by dielectric force. Realized nanomechanical resonators show resonant motion of high resonant frequency (up to ~31 Mhz) and mechanical quality factor up to over 48,000 at room temperature and moderate vacuum condition. From the FEA (Finite Element Analysis) of resonant motion, doubly clamped resonator shows torsional motion and in-plane motion which can be assigned to additional multiple modes in resonant response measurement

Keywords

dielectricstress/strain relationshipactuator
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1424: Symposium SS – Properties and Processes at the Nanoscale Nanomechanics of Material Behavior , 2012 , mrsf11-1424-ss15-52
Copyright
Copyright © Materials Research Society 2012

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References

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