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Dielectric and Ferroelectric Properties of Sol-Gel Derived PLZT Films

Published online by Cambridge University Press:  15 February 2011

G. Teowee ,
E.L. Quackenbush ,
C.D. Baertlein ,
J.M. Boulton ,
E.A. Kneer  and
D.R. Uhlmann
G. Teowee
Affiliation:
Donnelly Corporation, 4545 East Fort Lowell Road, Tucson, AZ 85712.
E.L. Quackenbush
Affiliation:
Department of Materials Science and Engineering, University of Arizona, Tucson, AZ 85721.
C.D. Baertlein
Affiliation:
Donnelly Corporation, 4545 East Fort Lowell Road, Tucson, AZ 85712.
J.M. Boulton
Affiliation:
Department of Materials Science and Engineering, University of Arizona, Tucson, AZ 85721.
E.A. Kneer
Affiliation:
Department of Materials Science and Engineering, University of Arizona, Tucson, AZ 85721.
D.R. Uhlmann
Affiliation:
Department of Materials Science and Engineering, University of Arizona, Tucson, AZ 85721.
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Abstract

There has not been much exploration of PLZT film properties as a function of compostion reported in the literature. A survey of numerous PLZT films covering a wide spectrum of the PLZT phase diagram was undertaken to explore the dependence of film properties on composition. A series of sol-gel derived PLZT films were prepared on platinized Si wafers and fired to 700C to obtain the perovskite phase. The film compositions include PLZT x/65/35, x/20/80, x/53/47 for x = 0, 2, 4, 6, 8, 10 and 12 and 7.5/x/y where x/y = 70/30, 53/47, 20/80 and 0/100. These films were characterized for their dielectric and ferroelectric properties. The films definitely showed a strong dependence of final film properties on composition, providing a valuable tool for the material engineering of ferroelectric film properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 433
Copyright
Copyright © Materials Research Society 1995

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References

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