Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-27T02:01:58.271Z Has data issue: false hasContentIssue false
  • English
  • Français

Diamond-Like Carbon Thin Films with Extremely High Compressive Stress (>8~12GPa) for Advanced CMOS Strain Engineering

Published online by Cambridge University Press:  09 August 2012

Xiaolong Ma ,
Huaxiang Yin ,
Zuozhen Fu ,
Haiqiang Zhang ,
Xu Zhang ,
Jiang Yan ,
Chao Zhao ,
Dapeng Chen  and
Tianchun Ye
Xiaolong Ma
Affiliation:
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, 100029, Beijing, China
Huaxiang Yin
Affiliation:
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, 100029, Beijing, China
Zuozhen Fu
Affiliation:
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, 100029, Beijing, China
Haiqiang Zhang
Affiliation:
Key Laboratory of Beam Technology and Material Modification of Ministry of Education, Beijing Normal University, 1000875, Beijing, China
Xu Zhang
Affiliation:
Key Laboratory of Beam Technology and Material Modification of Ministry of Education, Beijing Normal University, 1000875, Beijing, China
Jiang Yan
Affiliation:
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, 100029, Beijing, China
Chao Zhao
Affiliation:
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, 100029, Beijing, China
Dapeng Chen
Affiliation:
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, 100029, Beijing, China
Tianchun Ye
Affiliation:
Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, 100029, Beijing, China
Get access

Abstract

Diamond-like carbon (DLC) films as a new strain-capping material with compressive stress up to 12GPa for strained silicon technology were fabricated by filtered cathodic vacuum arc (FCVA) deposition system. The films’ compositions and bonding structures were characterized using multi-wavelength Raman spectroscopy. The relationship between intrinsic stress and G peak dispersion of the films’ Raman spectra were discussed. The results showed that the bias voltage applied to substrate during deposition determines films’ sp3 bonding content and intrinsic stress. Process compatibility of the DLC films with standard CMOS technology was confirmed by using WDXRF measurement. Also diffusion behavior of carbon atoms in DLC films with copper and silicon was studied with a Cu(200nm)/DLC(40nm)/silicon multilayer structure annealed at 500℃ in N2 atmosphere for an hour. At last, stress induced on silicon surface by DLC strips was characterized using surface sensitive UV-Raman spectroscopy. The results showed that DLC films with extremely high compressive stress have potential application in future CMOS strain engineering.

Keywords

Sistress/strain relationshipRaman spectroscopy
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1427: Symposium B – Heterogeneous Integration Challenges of MEMS, Sensor and CMOS LSI , 2012 , mrss12-1427-b07-16
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Chu, M. et al. ., Annu. Rev. Mater. Res. 39, 203(2009).Google Scholar
[2] Tan, K.-M. et al. ., IEDM, pp.127–130(2007).Google Scholar
[3] Robertson, J., Mater. Sci. Eng. R 37,129(2002).Google Scholar
[4] Kahn, M. et al. ., BHM, 155, 534–540(2010).Google Scholar
[5] Ferrari, A.C. et al. ., Phys. Rev. B, 61, 14095(2000).Google Scholar
[6] Ferrari, A.C. et al. ., Phil. Trans. R. Soc. Lond. A, 362, 2477–2512(2004)Google Scholar