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Diamond Nucleation During Biased Chemical Vapor Deposition

Published online by Cambridge University Press:  25 February 2011

Roseann Csencsits ,
Janet Rankin ,
Rachel E. Boekenhauer ,
Michael K. Kundmann  and
Brian W. Sheldon
Roseann Csencsits
Affiliation:
Brown University, Division of Engineering, Providence, RI 02912
Janet Rankin
Affiliation:
Brown University, Division of Engineering, Providence, RI 02912
Rachel E. Boekenhauer
Affiliation:
Brown University, Division of Engineering, Providence, RI 02912
Michael K. Kundmann
Affiliation:
Brown University, Division of Engineering, Providence, RI 02912
Brian W. Sheldon
Affiliation:
Brown University, Division of Engineering, Providence, RI 02912
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Abstract

The initial stages of bias-enhanced chemical vapor deposition (CVD) of diamond were investigated in a microwave-plasma system. Samples were characterized with TEM and concurrent electron energy loss spectroscopy (EELS) to characterize chemical bonding in the deposited material. The results show that a thin amorphous carbon film is deposited during biasing, and that diamond nucleation occurs on this amorphous film. Isolated regions of crystalline SiC within the amorphous layer were also observed at longer bias times. These regions apparently form by a reaction between the amorphous carbon layer and the silicon substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 695
Copyright
Copyright © Materials Research Society 1993

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References

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