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Diamond Growth Chemistry During Atmospheric-Pressure Plasma Cvd

Published online by Cambridge University Press:  10 February 2011

S. L. Girshick  and
J. W. Lindsay
S. L. Girshick
Affiliation:
Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455
J. W. Lindsay
Affiliation:
Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN 55455
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Abstract

Diamond films were deposited by chemical vapor deposition using a radio- frequency induction plasma operating at 130 torr. Linear growth rates of polycrystalline diamond films ranged from 18 to 37 μm h-1. For a fixed substrate temperature of 1000°C the input methane-hydrogen ratio was varied from 2% to 10%. Over this range the resulting film morpologies changed from faceted ball-like structures to well-faceted diamond, then to non-faceted balls, and for the well- faceted films increases in methane-hydrogen ratio caused the film texture to shift toward the <100> direction. During these experiments gas sampled through an orifice in the center of the substrate was delivered to a gas chromatograph for measurement of stable hydrocarbon species. As the input methane-hydrogen ratio was increased the measured methane-acetylene ratio decreased. The gas chromatograph measurements showed marked differences from measurements made for an RF reactor with somewhat different flow geometry operating at atmospheric pressure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 416: Symposium DD – Diamond for Electronic Applications , 1995 , 3
Copyright
Copyright © Materials Research Society 1996

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References

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