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Device Performance of Laser Annealed Double Heterostructure GaAlAs Materials1

Published online by Cambridge University Press:  15 February 2011

M.J. Brett ,
J.A. Rostworowski ,
R.R. Parsons ,
A.J. Springthorpe ,
C.M. Look  and
J.C. Dyment
M.J. Brett
Affiliation:
Dept. of Physics, University of British Columbia, Vancouver, Canada
J.A. Rostworowski
Affiliation:
Dept. of Physics, University of British Columbia, Vancouver, Canada
R.R. Parsons
Affiliation:
Dept. of Physics, University of British Columbia, Vancouver, Canada
A.J. Springthorpe
Affiliation:
Bell-Northern Research, Ottawa, Canada
C.M. Look
Affiliation:
Bell-Northern Research, Ottawa, Canada
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Abstract

We have laser annealed double heterostructure GaAlAs material with homogeneous ruby laser pulses such that maximum laser light absorption occurs in the active layer. With laser anneal intensities sufficient to melt the active layer, the radiative efficiency of the double heterostructures was reduced by a factor of two. Performance of electroluminescent devices fabricated from annealed material was much worse than performance of devices fabricated from unannealed material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 295
Copyright
Copyright © Materials Research Society 1981

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Footnotes

1

Supported in part by the NSERC of Canada, grant #67–7804.

References

REFERENCES

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