Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-19T03:58:51.669Z Has data issue: false hasContentIssue false
  • English
  • Français

Device And Fabrication Issues of High Performance Si/Sige Fets

Published online by Cambridge University Press:  10 February 2011

M. Arafa ,
I. Adesida  and
K. Ismail
M. Arafa
Affiliation:
Coordinated Science Laboratory and the Center of Compound Semiconductor Microelectronics. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, [email protected].
I. Adesida
Affiliation:
Coordinated Science Laboratory and the Center of Compound Semiconductor Microelectronics. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, [email protected].
K. Ismail
Affiliation:
IBM T. J. Watson Research Center, Yorktown Heights, NY 10598.
Get access

Abstract

A review of the latest results on high performance Si/SiGe FETs grown on relaxed buffer is presented. A discussion of the fabrication issues facing the achievement of these devices is also included.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 83
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Refrences

1. Arafa, M., Ismail, K., Chu, J. O., Meyerson, B. S., and Adesida, I., IEEE Electron Dev. Lett., 17 (12), 586 (1996); M. Arafa, Ph. D. thesis, University of Illinois at Urbana-Champaign, 1997.Google Scholar
2.. Glick, M., Hackbarth, T., König, U., Haas, A., Hock, G., Kohn, E., Electronics Lett., 33 (4), 335, (1997).Google Scholar
3. Daembkes, Heinrich et al., IEEE Trans. on Electron Devices, ED-33 (5), 63 (1986); U. König et al., Electronics Lett., 7 (16), 1405 (1991); U. Kbnig et al., Electronics Lett., 160 (1992); K. Ismail et al., IEEE Trans. on Electron Devices, 13 (5), 229 (1992); U. König et al., IEEE Electron Device Lett., 14 (3), 97 (1993); T. N. Jackson et al., IEEE Trans. on Electron Devices, 40 (11), 2104 (1993); K. Ismail et al., IEEE Electron Device Lett., 14 (7), 348 (1993); V. I. Kuznestov et al., J. Vac. Sci. Technol. B, 13 (6), 1353 (1995); M. Gliick et al., Electronics Lett., 33 (4), 335 (1997); J. Welser et al., IEEE Electron Device Lett., 15 (3), 100 (1994); K. Ismail et al., IEEE Electron Device Lett., 18 (9), 435 (1994).Google Scholar
4. Pearsall, T. P. et al., IEEE Electron Device Lett., EDL-7 (5 ), 308(1986); U. Konig et al., Electronics Lett., 29 ( 5 ), 486 (1993); U. Konig et al., IEEE Electron Device Lett., 14 ( 4 ), 205 (1993); M. Arafa et al., Electronics Lett., 31 ( 8 ), 680 (1995); M. Arafa et al., IEEE Electron Device Lett., 17 ( 3 ), 124 (1996); M. Arafa et al., IEEE Electron Device Lett., 17 ( 9 ), 449 (1996); I. Adesida et al., Microelectronic Engineering, 35, 257 (1997); M. Arafa et al., IEEE Electron Dev. Lett., 17 ( 12 ), 586 (1996).Google Scholar
5. Nayak, D. K. et al., IEEE Electron Device Lett., 12 (4), 154 (1994); Sophie Verdonckt- Vandebroek et al., IEEE Electron Device Lett., 12 ( 8 ), 447 (1991); Sophie Verdonckt- Vandebroek et al., IEEE Trans. on Electron Devices, 41 ( 1 ), 90 (1994); V. P. Kesan et al., Proceedings of IEDM-91, 25 (1991); D. K. Nayak et al., Proceedings of IEDM- 92, 777 (1992); D. K. Nayak et al., IEEE Electron Device Lett., 14 ( 11 ), 520 (1993); Kaushik Bhaumik et al., Proc. of the 1993 Int. Semiconductor Device Research Symposium ISDRS, 349 (1993); E. Murakami et al., IEEE Trans. on Electron Devices, 41 ( 5 ), 857 (1994).Google Scholar
6. Ismail, K., IEDM'95, Washington DC (unpublished).Google Scholar
7. Taur, Y., Cohen, S., Wind, S., Lii, T., Hsu, C., Quinlan, D., Chang, C., Buchanan, D., Agnello, P., Mii, Y., reeves, C., Acovic, A., Kesan, V., Proceedings of IEDM'92, 901–904 (1992).Google Scholar
8. Reiger, Martin M., and Vogl, P., Physical Review B, 48 (19), 14276–14278 (1993).Google Scholar
9. Ismail, K., Solid State Phenomena, 47–48, 409–418 (1996).Google Scholar
10. LeGoues, F. K., MRS Bulletin /April, 38–44 (1996). 91Google Scholar
11. Richter, H., Fisher, A., Kissinger, G., Kruger, D., Proceedings of the International Semiconductor Conference, CAS, 1, 41–50 (1996).Google Scholar
12. Feenstra, R. M., Lutz, M. A., Stern, Frank, Ismail, K., Mooney, P. M., LeGoues, F. K., Stanis, C., Chu, J. O., and Meyerson, B. S., J. of Vac. Science and Technology B, 13 (4), 1608–1612 (1995)Google Scholar