Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-27T02:18:01.702Z Has data issue: false hasContentIssue false
  • English
  • Français

Development of Structure-Property Relationships in Disordered Zirconia Thin Films for High Energy Density Mim Capacitors

Published online by Cambridge University Press:  26 February 2011

Guneet Sethi ,
Michael T. Lanagan ,
Eugene Furman  and
Mark W. Horn
Guneet Sethi
Affiliation:
[email protected], The Pennsylvania State University, Materials Research Institute, 261 Materials Research Lab, University Park, PA, 16802, United States
Michael T. Lanagan
Affiliation:
[email protected], The Pennsylvania State University, Materials Research Institute, 261 Materials Research Lab, University Park, PA, 16802, United States
Eugene Furman
Affiliation:
[email protected], The Pennsylvania State University, Materials Research Institute, 261 Materials Research Lab, University Park, PA, 16802, United States
Mark W. Horn
Affiliation:
[email protected], The Pennsylvania State University, Materials Research Institute, 261 Materials Research Lab, University Park, PA, 16802, United States
Get access

Abstract

Amorphous zirconium oxide thin films were prepared by reactive magnetron sputtering. The dielectric films were characterized by impedance spectroscopy with temperature. The effect of annealing on capacitor performance was studied. Annealing gold electroded thin films at 250°C greatly reduced the losses with little changes in crystallinity. Space charge relaxation started to appear at 190°C. The activation energy for the relaxation was 0.84 eV with a very low relaxation frequency at room temperature (0.23μHz). Electrode effects dominated at very low frequencies at all temperatures. AC conductivity followed the universality behavior for the AC charge transport showing that the films are highly disordered. No DC conductivity regime was observed indicating that DC conductivity is very low. DC conductivity of the films was of the order of 10−13 S/m, which is lesser than the comparable thickness high quality gate oxides.

Keywords

amorphousenergy-storagedielectric properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 969: Symposium W – Heterogeneous Integration of Materials for Passive Components and Smart Systems , 2006 , 0969-W03-14
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Wagner, A.V., Johnson, G.W., Barbee, T.W. Jr., Mater. Res. Soc. Proc. 574, 219–224 (1999).Google Scholar
2. Ye, Y., Zhang, S. Z., 14th IEEE Pulsed Power Conference, Dallas, TX, 719–722 (2003).Google Scholar
3. O'Dawyer, J.J., Oxford University Press, London, UK (1964).Google Scholar
4. Kuo, D.H., Chien, C.H., Thin Solid Films, 429, 40–45 (2003).Google Scholar
5. Amor, S. Ben, Rogier, B., Baud, G. et al., Mat. Sci. Engg. B, 57, 28–39 (1998).Google Scholar
6. Ning-Lin, Z., Zhi-Tang, S., Chin. Phy. Let., 20, 2, 273 (2003).Google Scholar
7. Houssa, M., High-k Gate Dielectrics, Institute Physics Publishing, Philadelphia, PA, (2004).Google Scholar
8. Pengtao Gao, Meng, L.J., Santos, M.P. dos, Thin Solid Films, 377–278, 557–561 (2000).Google Scholar
9. Wong, M.S., Chia, W.J., Yashar, P., Surf. Coat. Tech., 86–87, 381–387 (1996).Google Scholar
10. Gao, P., Meng, L.J., Santos, M.P. dos, Teixeira, V., Vacuum, 56, 143 (2000).Google Scholar
11. Ji, Z., Haynes, J.A., Ferber, M.K., Rigsbee, J.M., Surf. Coat. Tech., 135, 109 (2001).Google Scholar
12. Wu, Kai, Okamoto, Tatsuki, Suzuoki, Yasuo, J. Appl. Phys., 98,114102–1 (2005).Google Scholar
13. Sethi, G., Lanagan, M.T., Horn, M.W., Thin Solid Films, (2006) submitted.Google Scholar
14. Barbee, T.W. Jr. Johnson, G.W., US Patent 5 742 471 (21 April 1998).Google Scholar
15. Russak, M.A., Jahnes, C.V., Katz, E.P., J. Vac. Sci. Tech. A, 7, 3, 1248 (1989).Google Scholar
16. Alberti, A., Borzi, A.M., Ravesi, S., Appl. Phys. Let., 84, 2, 209–211 (2004).Google Scholar
17. Mraz, S., Schneider, J.M., Appl. Phys. Let., 89, 051502 (2006).Google Scholar
18. Novkovski, N., Semicond. Sci. and Tech., 21, 945–951 (2006).Google Scholar
19. Dearnaley, G., Morgan, D.V., Stoneham, A.M., J. Non-Cryst. Solids, 4, 593–612 (1970).Google Scholar
20. Jonnson, A.K., Niklasson, G.A., Veszelei, M., Thin Solid Films, 202, 242–247 (2002).Google Scholar
21. Dyre, J.C. and Schroder, T.B., Rev. Modern Phys., 72, 3, 873 (2000).Google Scholar