Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-27T02:31:19.136Z Has data issue: false hasContentIssue false
  • English
  • Français

Development of Remote Plasma Enhanced Ohemical Vapor Deposition Processes Through the use of in Vacuo Electron Diffraction and Electron Spectroscopy

Published online by Cambridge University Press:  21 February 2011

R. A. Rulder ,
G. G. Fountain ,
S. V. Hattangady ,
J. B. Posthill  and
R. J. Markunas
R. A. Rulder
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709
G. G. Fountain
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709
S. V. Hattangady
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709
J. B. Posthill
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709
R. J. Markunas
Affiliation:
Research Triangle Institute, Research Triangle Park, NC 27709
Get access

Abstract

Remote plasma enhancecd chemical vapor deposition techniques have been developed for a wide variety of processes. These include SiO2, Si3N4, Si, Ge, GaN, GaAs, and a-Si:H depositions. This development has been enabled through the use of electron diffraction and electron spectroscopy techniques. These techniques have been used to qualify cleaning procedures prior to epitaxial or dielectric depositions. They have beeii used to qualify epitaxial deposition conditions by defining suitable.temperature and rate conditions. And, they have been used to evaluate cross-contamination issues. In situ techniques have been used in conjunction with ex situ characterizations to identify and correct problems in wafer cleaning, epitaxy, and process integration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 165 , 1989 , 151
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Rudder, R.A., Hendry, R.C., and Markunas, R.J., J. Vac. Sci. Technol. A 7, 802 (1985).Google Scholar
2. Renier, M., Liehr, M., Gates, S.M., O'Sullivan, J., Rubloff, G.W., and Meyerson, B.S., J. Vac. Sci. Technol. A 5, 2098 (1987).Google Scholar
3. Fountain, G.G., Rudder, R.A., Hattangady, S.V., Markunas, R.J., and Lindorme, P.S., J. Appl. Phys. 63, 4744 (1988).Google Scholar
4. Kern, Werner, “Purifying Si and SiO2 Surfaces with Hydrogen Peroxide,” Semiconductor International, april 1984, pp. 94–99.Google Scholar
5. Rudder, R.A., Hattangady, S. V., Posthill, J.B., and Markunas, R.J., Mat. Res. Soc. Symp. Proc. 116, 529 (1988).Google Scholar
6. Fountain, G.G., Rudder, R.A., Hattangady, S.V., Posthill, J.B., and Markunas, R.J., to be published in MRS Spring Proc., San Diego, 1989.Google Scholar
7. Fountain, G.G., Rudder, R.A., Hattangady, S.V., Vitkavage, D.J., and Markunas, R.J., AIP Conf. Proc. No. 167, 338 (1988).Google Scholar
8. Breaux, L., Anthony, B., Hsu, T., Banerjee, S., and Tasch, A., Appl. Phys. Lett. 15, 1885 (1989).Google Scholar
9. Breaux, L., Anthony, B., Hsu, T., Banerjee, S., and Tasch, A., in Proceedings of the Industry-University Advanced Materials Conference 1989, March 6-9, 1989, Denver, CO, edited by Fred W. Smith (Advanced Materials Institute, in press).Google Scholar
10. Vitkavage, D.J., Fountain, G.G., Rudder, R.A., Hattangady, S.V., and Markunas, R.J., Appl. Phys. Lett. 53, 692 (1988).Google Scholar
11. Fountain, G.G., Rudder, R.A.. Hat-tangady, S.V., Vitkavage, D.J., and Niarkunas, R.J., Electronics Letters 24. 1010 (1988).Google Scholar
12. Fountain, G.G., Rudder, R.A., Hattangady, S.V., Markunas, R.J., J.A. Hutchby. Technical Digest JEDM. PP. 887–889. Dec. 1989.Google Scholar
13. Fountain, G.G., Rudder, R.A.. Ilattangady, S.V., Markunas, R.J., and ViIkavage, D.J., Mat. Res. Soc. Symp. Proc. 114, 537 (1989).Google Scholar
14. Hattangady, S.V., Rudder, R.A., Fountain, G.G., Posthill, J.B., and Markunas, R.J., published in Mat. Res. Soc. Proc. 165, (1989).Google Scholar