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Development of Milliwatt Power AlGaN-based Deep UV-LEDs by Plasma-assisted Molecular Beam Epitaxy

Published online by Cambridge University Press:  31 January 2011

Yitao Liao ,
Christos Thomidis ,
Anirban Bhattacharyya ,
Chen-kai Kao ,
Adam Moldawer ,
Wei Zhang  and
Theodore D. Moustakas
Yitao Liao
Affiliation:
[email protected], Boston University, Electrical and Computer Engineering, 8 Saint Mary's St, RM 318, Boston, Massachusetts, 02215, United States
Christos Thomidis
Affiliation:
[email protected], United States
Anirban Bhattacharyya
Affiliation:
[email protected], Boston University, Electrical and Computer Engineering, 8 Saint Mary's St, RM 318, Boston, Massachusetts, 02215, United States
Chen-kai Kao
Affiliation:
[email protected], Boston University, Electrical and Computer Engineering, 8 Saint Mary's St, RM 318, Boston, Massachusetts, 02215, United States
Adam Moldawer
Affiliation:
[email protected], Boston University, Electrical and Computer Engineering, 8 Saint Mary's St, RM 318, Boston, Massachusetts, 02215, United States
Wei Zhang
Affiliation:
[email protected], Boston University, Electrical and Computer Engineering, 8 Saint Mary's St, RM 318, Boston, Massachusetts, 02215, United States
Theodore D. Moustakas
Affiliation:
[email protected], Boston University, Boston, Massachusetts, United States
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Abstract

In this paper, we report the development of AlGaN-based deep ultraviolet LEDs by rf plasma-assisted molecular beam epitaxy (MBE) emitting between 277 and 300 nm. Some of these devices were evaluated after fabrication at bare-die and some at wafer-level configurations. Devices with total optical output of 1.3 mW at injection current of 200 mA were produced, with maximum external quantum efficiency (EQE) of 0.16%. These performance values are equivalent to those reported for deep UV-LEDs grown by the Metalorganic chemical vapor deposition (MOCVD) method and measured at bare-die configuration. In parallel, we have evaluated the internal quantum efficiency (IQE) of AlGaN quantum wells, and found that such wells emitting at 250 nm have an IQE of 50%. From the analysis of these data, we concluded that the efficiency of deep UV LEDs is not limited by the IQE but by the light extraction efficiency, injection efficiency or a combination of both.

Keywords

molecular beam epitaxy (MBE)nitrideIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1202: Symposium I – III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions , 2009 , 1202-I10-01
Copyright
Copyright © Materials Research Society 2010

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References

1 Khan, A., Balakrishnan, K., and Katona, T., Nat. Photonics 2, 77 (2008).Google Scholar
2 Hirayama, H.,et al, Phys. Status Solidi A 206, 203 (2009).Google Scholar
3 Kim, K. H., Fan, Z. Y., Khizar, M., Nakarmi, M. L., Lin, J. Y., and Jiang, H. X., Appl. Phys. Lett. 85, 4777 (2004).Google Scholar
4 Mayes, K., Yasan, A., McClintock, R., Shiell, D., Darvish, S. R., Kung, P., and Razeghi, M., Appl. Phys. Lett. 84, 1046 (2004).Google Scholar
5 Allerman, A. A., Crawford, M. H., Fischer, A. J., Bogart, K. H. A., Lee, S. R., Follstaedt, D. M., Provencio, P. P., and Koleske, D. D., J. Cryst. Growth 272, 227 (2004).Google Scholar
6 Ren, Z. et al., Phys. Status Solidi C 4, 2482 (2007).Google Scholar
7 Zhou, L., Epler, J. E., Krames, M. R., Goetz, W., Gherasimova, M., Ren, Z., Han, J., Kneissl, M., and Johnson, N. M., Appl. Phys. Lett. 89, 241113 (2006).Google Scholar
8 Adivarahan, V., Heidari, A., Zhang, B., Fareed, Q., Islam, M., Hwang, S., Balakrishnan, K. and Khan, A., Appl. Phys. Express 2, 092102 (2009).Google Scholar
9 Kawasaki, K., Koike, C., Aoyagi, Y. and Takeuchi, M., Appl. Phys. Lett. 89, 261114 (2006).Google Scholar
10 Nikishin, S., Borisov, B., Kuryatkov, V., Holtz, M., Garrett, G. A., Sarney, W. L., Sampath, A. V., Shen, H., Wraback, M., Usikov, A. and Dmitriev, V., J Mater Sci: Mater Electron 19, 764 (2008).Google Scholar
11 Kipshidze, G., Kuryatkov, V., Zhu, K., Borisov, B., Holtz, M., Nikishin, S., and Temkin, H., J. Appl. Phys. 93, 1363 (2003).Google Scholar
12 Kipshidze, G., Kuryatkov, V., Borisov, B., Nikishin, S., Holtz, M., Chu, S. N. G. and Temkin, H., Phys. Status Solidi A 192, 286 (2002).Google Scholar
13 Sampath, A. V., Garrett, G. A., Collins, C. J., Sarney, W. L., Readinger, E. D., Newman, P. G., Shen, H., and Wraback, M., J. Electron. Mater. 35, 641 (2006).Google Scholar
14 Jmerik, V. et al., J. Cryst. Growth 311, 2080 (2009).Google Scholar
15 Chichibu, S. F. et al., Nature Mater. 5, 810 (2006).Google Scholar
16 Bhattacharyya, A., Moustakas, T. D., Zhou, L., Smith, D. J., and Hug, W., Appl. Phys. Lett. 94, 181907 (2009).Google Scholar
17 Moustakas, T. D., Lei, T., and Molnar, R. J., Physica B 185, 36 (1993).Google Scholar
18 Wang, Y., Özcan, A., Özaydin, G., Ludwig, K. Jr , Bhattacharyya, A., Moustakas, T. D., Zhou, H., Headrick, R., and Siddons, D. P., Phys. Rev. B. 74, 235304 (2006).Google Scholar
19 Zhang, J. P., Wang, H. M., Gaevski, M. E., Chen, C. Q., Fareed, Q., Yang, J. W., Simin, G., and Khan, M. Asif, Appl. Phys. Lett. 80, 3542 (2002).Google Scholar
20 Romano, L. T., Walle, C. G. Van de, Ager, J. W. III , Gotz, W., and Kern, R. S., J. Appl. Phys. 87, 7745 (2000).Google Scholar
21 Mayes, K., Yasan, A., McClintock, R., Shiell, D., Darvish, S. R., Kung, P., and Razeghi, M., Appl. Phys. Lett. 84, 1046 (2004).Google Scholar
22 Lee, K. B., Parbrook, P. J., Wang, T., Bai, J., Ranalli, F., Airey, R. J. and Hill, G., J. Cryst. Growth 311, 10 (2009).Google Scholar
23 Garrett, G. A., Sampath, A. V., Collins, C. J., Readinger, E. D., Sarney, W. L., Shen, H., Wraback, M., Soukhoveev, V., Usikov, A., Dmitriev, V., Phys. Status Solidi C 3, 2125 (2006).Google Scholar
24 Gao, Min, Bradley, S. T., Cao, Yu, Jena, D., Lin, Y., Ringel, S. A., Hwang, J., Schaff, W. J., and Brillson, L. J., J. Appl. Phys. 100, 103512 (2006).Google Scholar
25 Wang, Yiyi, Ozcan, Ahmet S., Ludwig, Karl F. Jr, Bhattacharyya, Anirban, Moustakas, T. D., Zhou, Lin, and Smith, David J., Appl. Phys. Lett. 88, 181915 (2006)Google Scholar
26 France, Ryan, Xu, Tao, Chen, Papo, Chandrasekaran, R., and Moustakas, T. D., Appl. Phys. Lett. 90, 062115 (2007).Google Scholar
27 Nam, K. B., Li, J., Nakarmi, M. L., Lin, J. Y., and Jiang, H. X., Appl. Phys. Lett. 84, 5264 (2004).Google Scholar