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Development of High Efficiency Thin Film Polycrystalline Silicon Solar Cells using Vest Process

Published online by Cambridge University Press:  10 February 2011

T. Ishihara ,
S. Arimoto ,
H. Morikawa ,
Y. Nishimoto ,
Y. Kawama ,
A. Takami ,
S. Hamamoto ,
H. Naomoto  and
K. Namba
T. Ishihara
Affiliation:
Nakatsugawa Works, Mitsubishi Electric Corporation, Hyogo, JAPAN
S. Arimoto
Affiliation:
Nakatsugawa Works, Mitsubishi Electric Corporation, Hyogo, JAPAN
H. Morikawa
Affiliation:
Nakatsugawa Works, Mitsubishi Electric Corporation, Hyogo, JAPAN
Y. Nishimoto
Affiliation:
Nakatsugawa Works, Mitsubishi Electric Corporation, Hyogo, JAPAN
Y. Kawama
Affiliation:
Nakatsugawa Works, Mitsubishi Electric Corporation, Hyogo, JAPAN
A. Takami
Affiliation:
Nakatsugawa Works, Mitsubishi Electric Corporation, Hyogo, JAPAN
S. Hamamoto
Affiliation:
Nakatsugawa Works, Mitsubishi Electric Corporation, Hyogo, JAPAN
H. Naomoto
Affiliation:
Nakatsugawa Works, Mitsubishi Electric Corporation, Hyogo, JAPAN
K. Namba
Affiliation:
Nakatsugawa Works, Mitsubishi Electric Corporation, Hyogo, JAPAN
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Abstract

Thin film Si solar cell has been developed using Via-hole Etching for the Separation of Thin films(VEST) process. The process is based on SOI technology of zone-melting recrystallization (ZMR) followed by chemical vapor deposition (CVD), separation of thin film, and screen printing. Key points for achieving high efficiency are (1)quality of Si films, (2)back surface emitter (BSE), (3)front surface emitter etch-back process, (4)back surface field (BSF) layer thickness and its resistivity, and (5)defect passivation by hydrogen implantation. As a result of experiments, we have achieved 16% efficiency(Voc:0.589V, Jsc:35.6mA/cm2, F.E:0.763) with a cell size of 95.8cm2 and the thickness of 77μm. It is the highest efficiency ever reported for large area thin film Si solar cells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 3
Copyright
Copyright © Materials Research Society 1998

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