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Development of Cross-Hatch Morphology During Growth of Lattice Mismatched Layers

Published online by Cambridge University Press:  18 March 2011

A. Maxwell Andrews ,
J.S. Speck ,
A.E. Romanov ,
M. Bobeth  and
W. Pompe
A. Maxwell Andrews
Affiliation:
Materials Department, University of California, Santa Barbara Santa Barbara, CA 93106-5050, U.S.A.
J.S. Speck
Affiliation:
Materials Department, University of California, Santa Barbara Santa Barbara, CA 93106-5050, U.S.A.
A.E. Romanov
Affiliation:
A.F.Ioffe Physico-Technical Institute, Russian Academy of Sciences St. Petersburg 194021, Russia
M. Bobeth
Affiliation:
Technical University of DresdenDresden 01609, Germany
W. Pompe
Affiliation:
Technical University of DresdenDresden 01609, Germany
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Abstract

An approach is developed for understanding the cross-hatch morphology in lattice mismatched heteroepitaxial film growth. It is demonstrated that both strain relaxation associated with misfit dislocation formation and subsequent step elimination (e.g. by step-flow growth) are responsible for the appearance of nanoscopic surface height undulations (0.1-10 nm) on a mesoscopic (∼100 nm) lateral scale. The results of Monte Carlo simulations for dislocation- assisted strain relaxation and subsequent film growth predict the development of cross-hatch patterns with a characteristic surface undulation magnitude ∼50 Å in an approximately 70% strain relaxed In0.25Ga0.75As layers. The model is supported by atomic force microscopy (AFM) observations of cross-hatch morphology in the same composition samples grown well beyond the critical thickness for misfit dislocation generation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 673: Symposium P – Dislocations and Deformation Mechanisms in Thin Films and Small Structures , 2001 , P5.2
Copyright
Copyright © Materials Research Society 2001

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References

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