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Development of an AlN Deep UV Detector for Space Application

Published online by Cambridge University Press:  17 March 2011

Feng Zhong ,
Changhe Huang ,
Yuri V. Danylyuk  and
Gregory W. Auner
Feng Zhong
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI
Changhe Huang
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI
Yuri V. Danylyuk
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI
Gregory W. Auner
Affiliation:
Department of Electrical and Computer Engineering, Wayne State University, Detroit, MI
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Abstract

AlN is a very promising deep UV sensing material suitable for space application such as exoatomospheric solar blind detectors due to its large band gap (6.2 eV), excellent radiation and thermal stability. In this paper, a deep UV detector based on AlN photoconductor was successfully grown and characterized. High quality AlN thin films on Sapphire have been confirmed by in-stu RHEED and X-ray diffraction measurements. The film has an optical Eg of 5.96 eV. The detector has extremely low dark current. Different electrodes were investigated as contact materials. Al and Pt are more suitable electrode contacts for AlN photoconductor compared to Ti. The DC responsivity of the detector starts to rise for photon energies of about 255 nm (4.9eV) and reaches its maximum 7×10-5 A/W at 195 nm (6.5eV).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G6.33
Copyright
Copyright © Materials Research Society 2001

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References

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