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Development and Application of On-Wafer Small Angle X-Rayscattering for the Quantification of Pore Morphology in Low Kporous Silk Semiconductor Dielectrics

Published online by Cambridge University Press:  01 February 2011

Brian Landes ,
Brandon Kern ,
Ted Stokich ,
Jason Niu ,
Dorie Yontz ,
Mike Radler-Carol ,
Mohler Kacee Ouellette ,
Sebring Lucero ,
Jerry Hahnfeld  and
Danny King
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Brian Landes
Affiliation:
(Dow Chemical Co., Advanced Electronic Materials, Midland, MI 48667)
Brandon Kern
Affiliation:
(Dow Chemical Co., Advanced Electronic Materials, Midland, MI 48667)
Ted Stokich
Affiliation:
(Dow Chemical Co., Advanced Electronic Materials, Midland, MI 48667)
Jason Niu
Affiliation:
(Dow Chemical Co., Advanced Electronic Materials, Midland, MI 48667)
Dorie Yontz
Affiliation:
(Dow Chemical Co., Advanced Electronic Materials, Midland, MI 48667)
Mike Radler-Carol
Affiliation:
(Dow Chemical Co., Advanced Electronic Materials, Midland, MI 48667)
Mohler Kacee Ouellette
Affiliation:
(Dow Chemical Co., Advanced Electronic Materials, Midland, MI 48667)
Sebring Lucero
Affiliation:
(Dow Chemical Co., Advanced Electronic Materials, Midland, MI 48667)
Jerry Hahnfeld
Affiliation:
(Dow Chemical Co., Advanced Electronic Materials, Midland, MI 48667)
Danny King
Affiliation:
(Dow Chemical Co., Advanced Electronic Materials, Midland, MI 48667)
John Quintana
Affiliation:
Northwestern University, DND-CAT
Steve Weigand
Affiliation:
Northwestern University, DND-CAT
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Abstract

The continual drive for faster interconnects requires the development of new interlayer dielectricmaterials with k values less than 2.1. Porous SiLKTM semiconductor dielectric resin wasdeveloped to achieve these low dielectric constants by introducing nanometer-sized pores intothe dense SiLK resin matrix. A quantitative description of the nano-porous morphology in low-kinterlayer dielectrics can be difficult to achieve for many reasons, including: complexities in theporous structure (size range, geometry, pore/pore interaction), inadequate mathematicaldescriptors, limitations of existing metrology technology, and availability of “tailor-made” experimental samples with a wide range of pore morphologies. On-wafer quantification of poremorphology is even more difficult as data must be obtained from extremely limited samplevolumes (thin films of ∼100-500 nm) residing on thick silicon (Si) wafer substrates.

This paper will focus on the design, development and successful application of on-wafer smallangle x-ray scattering (SAXS) technology to characterize the morphology of porous SiLK resin.It will be demonstrated, by example, that this technology is able to deliver rapid quantificationover the entire pore size range for these systems. Recently developed data acquisition, reductionand analysis tools will be described. Direct evaluation of the strengths and challenges of severalmodels used to generate average pore size and pore size distribution will be reviewed. Finally,additional capabilities offered by this technology (wafer mapping and detection of “killer” pores)will also be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 766: Symposium E – Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics - 2003 , 2003 , E9.10
Copyright
Copyright © Materials Research Society 2003

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References

1.The International Technology Roadmap for Semiconductors: 2001 Edition, ISMIT.Google Scholar
2. Silvis, H.C; Hahnfeld, J.L; Niu, Q.J; Radler, M.J, et al, Abstracts of papers, 224th ACS National Meeting, Boston, MA, U.S., Aug. 18-22,2002 (2002), PMSE-114. American Chemical Society, Washington, D.C.Google Scholar
3. Waterloos, J.J; Struyf, H.; Van Aelst, J.; Das, A.; Caluwaerts, R.; Alaerts, C.; Boullart, W.; Tokei, Z.S; Iacopi, F.; Van Hove, M.; Maex, K., Advanced Metallization Conference 2001, Conference Proceedings, Montreal, Canada, Oct. 8-11, 2002 (2002), 19-24. Materials Research Society, Warrendale, PA.Google Scholar
4. Strittmatter, R.J., Hahnfeld, J.L.; Silvis, H.C; Stokich, T.M; Perry, J.D; Ouellette, K.B; Niu, Q.J; Godschalx, J.P; Kalantar, T.H; Mubarekyan, E.; Hefner, R.E; Lyons, J.W; Dominowski, J.M; Buske, G.R, Proceedings of the Materials Research Society, April 2003.Google Scholar
5. Tyberg, C.S et al, Abstracts of Papers 224th ACS National Meeting, Boston, MA, U.S., Aug. 18-22, 2002 (2002), PMSE-115. American Chemical Society, Washington, D.C.Google Scholar
6. Glatter, O., J. Appl. Cryst., 13, 7–11 (1980).Google Scholar
7. Potton, J.A; Daniell, G.J; Rainford, B.D, J. Appl. Cryst., 21, 663–668, 891-897 (1988).Google Scholar
8. Svergun, D.I; Semenyuk, A.V; Feigin, L.A, Acta. Cryst., A44, 244–250 (1988).Google Scholar
9. Vrij, A., J. Chem. Phys., 71, 3267–3270 (1979).Google Scholar
10. Blum, L.; Stell, G., J. Chem. Phys., 71, 42–46 (1980).Google Scholar
11. Salacuse, J.J; Stell, G., J. Chem. Phys., 77, 3714–3725 (1982).Google Scholar
12. Pedersen, J.S, J. Appl. Cryst., 27, 595–608 (1994).Google Scholar
13. Glatter, O., J. Appl. Cryst., 13, 7–11 (1980).Google Scholar
14. Omote, K.; Ito, Y.; Kawamura, S.; Appl. Phys. Letters, 82, #4, 544–546 (2003).Google Scholar