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Deuteron Magnetic Resonance in a-Si and a-SiGe Produced from Fluorides

Published online by Cambridge University Press:  28 February 2011

V. P. Bork ,
P. A. Fedders ,
R. E. Norberg ,
D. J. Leopold ,
K. D. Mackenzie  and
W. Paul
V. P. Bork
Affiliation:
Washington University, St. Louis, Missouri 63130
P. A. Fedders
Affiliation:
Washington University, St. Louis, Missouri 63130
R. E. Norberg
Affiliation:
Washington University, St. Louis, Missouri 63130
D. J. Leopold
Affiliation:
Harvard University, Cambridge, Massachusetts 02138
K. D. Mackenzie
Affiliation:
Harvard University, Cambridge, Massachusetts 02138
W. Paul
Affiliation:
Harvard University, Cambridge, Massachusetts 02138
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Abstract

Deuteron magnetic resonance line shapes and spin lattice relaxation times are presented for a-Si:D, F and a-SiGe:D, F. These parameters differ from those for typical a-Si:D, H samples, but in some respects are similar to those for an annealed a-Si:D, H sample. The a-SiGe:D, F spectra display an unusually large broad central weakly bound D resonance component and a barely-resolved Ge-D quadrupolar doublet. Comparisons indicate substantial differences in void morphology between the a-Si:D, F and a-SiGe:D, F.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 307
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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