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Deuterium Incorporation into Glow-Discharge Deposited Deuterated-Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

L. S. Sidhu ,
F. Gaspari ,
S. K. O'Leary  and
S. Zukotynski
L. S. Sidhu
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada M5S 1A4.
F. Gaspari
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada M5S 1A4.
S. K. O'Leary
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada M5S 1A4.
S. Zukotynski
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, Canada M5S 1A4.
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Abstract

We investigate deuterium incorporation into deuterated-hydrogenated amorphous silicon grown by the saddle-field glow-discharge of deuterium and silane. The presence of HD and SiH3D in the discharge suggests strong gas phase mixing. The dominant process of deuterium incorporation into the growing film appears to be the direct reaction between deuterium and the growth surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 87
Copyright
Copyright © Materials Research Society 1995

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References

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