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Deuterium in Crystalline and Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

R. Borzi ,
H. Ma ,
P. A. Fedders ,
D. J. Leopold ,
R. E. Norberg ,
J. B. Boyce ,
N. M. Johnson ,
S. E. Ready  and
J. Walker
R. Borzi
Affiliation:
Department of Physics, Washington University, One Brookings Drive, St. Louis, MO 63130, [email protected]
H. Ma
Affiliation:
Department of Physics, Washington University, One Brookings Drive, St. Louis, MO 63130, [email protected]
P. A. Fedders
Affiliation:
Department of Physics, Washington University, One Brookings Drive, St. Louis, MO 63130, [email protected]
D. J. Leopold
Affiliation:
Department of Physics, Washington University, One Brookings Drive, St. Louis, MO 63130, [email protected]
R. E. Norberg
Affiliation:
Department of Physics, Washington University, One Brookings Drive, St. Louis, MO 63130, [email protected]
J. B. Boyce
Affiliation:
Xerox PARC, Palo-Alto, CA 94304
N. M. Johnson
Affiliation:
Xerox PARC, Palo-Alto, CA 94304
S. E. Ready
Affiliation:
Xerox PARC, Palo-Alto, CA 94304
J. Walker
Affiliation:
Xerox PARC, Palo-Alto, CA 94304
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Abstract

We report deuteron magnetic resonance (DMR) measurements on aged deuterium-implanted single crystal n-type silicon and comparisons with amorphous silicon spectra. The sample film was prepared six years ago by deuteration from a-D2 plasma and evaluated by a variety of experimental methods. Deuterium has been evolving with time and the present DMR signal shows a smaller deuteron population. A doublet from Si-D configurations along 〈111〉 has decreased more than have central molecular DMR components, which include 47 and 12 kHz FWHM gaussiane. Transient DMR magnetization recoveries indicate spin lattice relaxation to para-D2 relaxation centers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 117
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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