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Determining Thin Film Density by Energy-Dispersive X-Ray Reflectivity: Application to a Spin-On-Glass Dielectric

Published online by Cambridge University Press:  15 February 2011

W. E. Wallace  and
W. L. Wu
W. E. Wallace
Affiliation:
National Institute of Standards and Technology Bldg. 224, Rm. B320 Gaithersburg, MD 20899 USA
W. L. Wu
Affiliation:
National Institute of Standards and Technology Bldg. 224, Rm. B320 Gaithersburg, MD 20899 USA
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Abstract

A novel method for determining thin film density by energy dispersive x-ray reflectivity is demonstrated for a polymer-derived spin-on-glass dielectric intended for microelectronics applications. The effects of sample misalignment limit the accuracy of x-ray reflectivity as typically practiced. These effects may be properly accounted for by measuring the critical angle for reflection at many different x-ray wavelengths simultaneously. From this measurement, thin film density can be ascertained with much improved accuracy. The results of the x-ray reflectivity measurement are compared to those derived from MeV ion scattering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 503
Copyright
Copyright © Materials Research Society 1996

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References

1. Lekner, J., Theory of Reflection of Electromagnetic and Particle Waves, (Martinus-Nijhoff, Dordrecht, The Netherlands, 1987.)Google Scholar
2. Russell, T.P., Mat. Sci. Rep. 5, 171 (1990).Google Scholar
3.. Wilson, S.R., Tracy, C.J., and Freeman, J.L., eds., Handbook of Multilevel Metallization for Integrated Circuits: Materials Technology, and Applications, (Noyes Publications, Park Ridge, NJ, 1993.)Google Scholar
4. Rao, G.K, Multilevel Interconnect Technology, (McGraw-Hill, New York, 1993.)Google Scholar
5. Smolinsky, G., Lifshitz, N., and Ryan, V., in Electronics Packaging and Materials Science IV, edited by Jaccodine, R., Jackson, K.A., Lillie, E.D., Sundahl, R.C., (Mater. Res. Soc. Proc. 154, Pittsburgh, 1989), p. 173–182.Google Scholar
6. Feldman, L.C. and Mayer, J.W., Fundamentals of Surface and Thin Film Analysis, (North-Holland, New York, 1987.)Google Scholar
7. Schalchli, A., Benattar, J.J., Licoppe, C., Europhys. Lett. 26, 271 (1994).Google Scholar
8. Wallace, W.E. and Wu, W.L., Appl. Phys. Lett. 67, 1203 (1995).Google Scholar
9. The polysilsesquioxane polymer was synthesized by Collazo, Hydee, Figge, Lisa, Berry, Don (Department of Chemistry, the University of Pennsylvania, Philadelphia), and Barry Arkles (Gelest, Inc., Tulleytown, Pa).Google Scholar
10. The electron density and x-ray absorption were fit using the Parrat formalism (Parrat, L.G., Phys. Rev. 95, 359 (1954)), and the computer code of Ankner (J.F. Ankner and C.J. Majkrzak, Proc. SPIE 1738, 260 (1992)).Google Scholar
11. Doolittle, L.R., Nucl. Instr. and Meth. B 9, 334 (1985).Google Scholar
12. Leavitt, J.A., McIntyre, L.C., Stoss, P., Oder, J.G., Ashbaugh, M.D., Dezfouly-Arjomandy, B., Yang, Z.M. and Lin, Z., Nucl. Instr. and Meth. B 40/41, 776 (1989).Google Scholar