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Determine the Three-Dimensional Crystallographic Misorientation in Heterostructures by Selected Area Diffraction (SAD) in TEM

Published online by Cambridge University Press:  10 February 2011

X. J. Guo ,
C.-Y. Wen ,
J. H. Huang  and
H. C. Shih
X. J. Guo
Affiliation:
Dept. of Chemistry, National Taiwan University, Taipei, Taiwan Center of Materials Sciences, National Tsing-Hua University, Hsinchu, Taiwan
C.-Y. Wen
Affiliation:
Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan
J. H. Huang
Affiliation:
Center of Materials Sciences, National Tsing-Hua University, Hsinchu, Taiwan Dept. of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan
H. C. Shih
Affiliation:
Dept. of Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Taiwan
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Abstract

We proposed a concise and novel scheme to determine the crystallographic misorientation of heteroepitaxial structures. In addition to subtle high-resolution transmission electron microscope images, the information revealed from selected-area diffraction patterns at the interfaces offers another path to determine the angles of misorientations. The principle is to extract the basically three-dimensional misorientation information from a two-dimensional selected-area diffraction pattern through the employment of the Laue circle

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 271
Copyright
Copyright © Materials Research Society 2000

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References

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