Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-25T15:50:37.858Z Has data issue: false hasContentIssue false

Determination of The State of Deformation in Epitaxial Layers Using High Resolution X-Ray Diffraction

Published online by Cambridge University Press:  21 February 2011

P.J. Dugdale
Affiliation:
Dept. of Materials Science and Engineering, University of Liverpool, PO Box 147, Liverpool L69 3BX, UK
R.C. Pond
Affiliation:
Dept. of Materials Science and Engineering, University of Liverpool, PO Box 147, Liverpool L69 3BX, UK
S.J. Barnett
Affiliation:
DRA Malvern, St. Andrews Road, Malvern, Worcs, WR14 3PS., UK
Get access

Abstract

The state of deformation in epitaxial layers of InGaAs grown by MBE on GaAs substrates has been determined using high resolution X-ray diffraction. This method enables the strains and rigid body rotations which occur in the layers to be measured and these are described by means of a tensor. Layers of different thicknesses have been grown on substrates whose dislocation densities differ by three orders of magnitude in order to assess the influence of this parameter on layer relaxation through the motion of misfit dislocations to the interface. Transmission electron microscopy has also been used to provide additional information on the relaxations.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Matthews, J.W., Epitaxial Growth B, (Academic Press Inc. London 1975), p.560.Google Scholar
2. Beanland, R., PhD Thesis, University of Liverpool, 1991.Google Scholar
3. Stirland, D. (private communication).Google Scholar
4. Whitehouse, C.R., Barnett, S.J., Usher, B.F., Cullis, A.G., Keir, A.M., Johnson, A.D., Clark, G.F., Tanner, B.K., Spirkl, W., Lunn, B., Hagston, W.E. and Hogg, J.C.H., Inst. Phys. Conf. Ser. No. 134 : Section 9, 1993.Google Scholar
5. Freund, L.B., J. Appl. Phys. 68 (5), (1990).CrossRefGoogle Scholar
6. Hull, R. and Bean, J.C., Appl. Phys. Lett. 55, (1990).Google Scholar
7. Fitzgerald, E.A., J. Vac. Sci. Tech. B7 (4), (1989).Google Scholar
8. Dodson, B.W., Appl. Phys. Lett. 53 (5), (1988).Google Scholar