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Determination of The State of Deformation in Epitaxial Layers Using High Resolution X-Ray Diffraction

Published online by Cambridge University Press:  21 February 2011

P.J. Dugdale ,
R.C. Pond  and
S.J. Barnett
P.J. Dugdale
Affiliation:
Dept. of Materials Science and Engineering, University of Liverpool, PO Box 147, Liverpool L69 3BX, UK
R.C. Pond
Affiliation:
Dept. of Materials Science and Engineering, University of Liverpool, PO Box 147, Liverpool L69 3BX, UK
S.J. Barnett
Affiliation:
DRA Malvern, St. Andrews Road, Malvern, Worcs, WR14 3PS., UK
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Abstract

The state of deformation in epitaxial layers of InGaAs grown by MBE on GaAs substrates has been determined using high resolution X-ray diffraction. This method enables the strains and rigid body rotations which occur in the layers to be measured and these are described by means of a tensor. Layers of different thicknesses have been grown on substrates whose dislocation densities differ by three orders of magnitude in order to assess the influence of this parameter on layer relaxation through the motion of misfit dislocations to the interface. Transmission electron microscopy has also been used to provide additional information on the relaxations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 319: Symposia CB – Defect-Interface Interactions , 1993 , 123
Copyright
Copyright © Materials Research Society 1994

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