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Determination of Strain Distributions in Aluminum Thin Films as a Function of Temperature by the use of Synchrotron Grazing Incidence X-Ray Scattering

Published online by Cambridge University Press:  22 February 2011

Ramnath Venkatraman ,
Paul R. Besser ,
Sean Brennan  and
John C. Bravman
Ramnath Venkatraman
Affiliation:
Dept. of Materials Science and Engineering, Stanford University, CA 94305
Paul R. Besser
Affiliation:
Dept. of Materials Science and Engineering, Stanford University, CA 94305
Sean Brennan
Affiliation:
Stanford Synchrotron Radiation Laboratory, Menlo Park, CA 94025
John C. Bravman
Affiliation:
Dept. of Materials Science and Engineering, Stanford University, CA 94305
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Abstract

We have measured elastic strain distributions with depth as a function of temperature in Al thin films of various thicknesses on oxidized silicon using synchrotron grazing incidence X-ray scattering (GIXS). Disregarding minor surface relaxation effects that depend on the film thickness, it is shown that there are no gross strain gradients in these films in the range of temperatures (between room temperature and 400°C) considered. We also observe X-ray line broadening effects, suggesting an accumulation of dislocations on cooling the films, and their annealing out as the films are reheated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 239: Symposium D – Thin Films: Stresses and Mechanical Properties III , 1991 , 227
Copyright
Copyright © Materials Research Society 1992

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References

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