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Determination of Hydrogen in Semiconductors and Related Materials by Cold Neutron Prompt Gamma-ray Activation Analysis

Published online by Cambridge University Press:  17 March 2011

Rick L. Paul
Rick L. Paul*
Affiliation:
Analytical Chemistry Division National Institute of Standards and Technology Gaithersburg, MD 20899
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Abstract

An instrument for prompt gamma-ray activation analysis (PGAA) at the NIST Center for Neutron Research has proven useful for the measurement of hydrogen and other elements in a variety of materials. The sample is irradiated by a beam of low energy neutrons. Gamma-rays emitted by atomic nuclei upon neutron capture are measured and elemental concentrations determined by comparison with appropriate standards. The detection limit for hydrogen is < 5 mg/kg in most materials, and 2 mg/kg for hydrogen measured in silicon. The instrument has been used to measure hydrogen mass fractions of < 100 mg/kg in high purity germanium, and < 10 mg/kg in quartz. More recently PGAA has been used to measure hydrogen in 1 μm thick porous thin films on a silicon substrate, and in crystals of silicon carbide and cerium aluminate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 813: Symposium G – Hydrogen in Semiconductors , 2004 , H2.2
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Paul, R. L., Lindstrom, R. M., and Heald, A. E., J. Radioanal. Nucl. Chem., 215 (1) 63–68. (1997)Google Scholar
2. Paul, R. L. and Lindstrom, R. M., J. Radioanal. Nucl. Chem, 243, 181–189, (2000).Google Scholar
3. Paul, R. L., American Laboratory, 34(3), 15–20 (2002).Google Scholar
4. Paul, R. L. and Lindstrom, R. M., in Diagnostic Techniques for Semiconductor Processing, edited by Glembocki, O. J., Pang, S. W., Pollak, F. H., Crean, G. M., Larrabee, G., (Mater. Res. Soc. Proc. 324, Pittsburgh, PA 1994), pp. 403–408.Google Scholar
5. Chen-Mayer, H. H., Mildner, D. F. R., Sharov, V. A., Xiao, Q. R., Cheng, Y. T., Lindstrom, R. M., and Paul, R. L., 68(10) (1997) 3744–3750.Google Scholar
6. Chen-Mayer, H. H, Mackey, E. A., Paul, R. L., Mildner, D., J. Radioanal. Nucl. Chem, 244 (2), 391–397, (2000).Google Scholar