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Determination of Hydrogen Density of States in Amorphous Silicon Using Fractional Evolution Experiments

Published online by Cambridge University Press:  15 February 2011

A. J. Franz ,
W. B. Jackson  and
J. L. Gland
A. J. Franz
Affiliation:
Dept. of Chemical Engineering, University of Michigan, Ann Arbor 48109–2136
W. B. Jackson
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304
J. L. Gland
Affiliation:
Dept. of Chemical Engineering, University of Michigan, Ann Arbor 48109–2136
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Abstract

Hydrogen plays an important role in the electronic behavior, structure and stability of amorphous silicon films. Therefore, determination of the hydrogen density of states (DOS) and correlation of the hydrogen DOS with the electronic film properties are important research goals. We have developed a novel method for determination of hydrogen DOS in silicon films, based on fractional evolution experiments. Fractional evolution experiments are performed by subjecting a silicon film to a series of linear, alternating heating and cooling ramps, while monitoring the hydrogen evolution rate. The fractional evolution data can be analyzed using two complementary memods, the fixed frequency factor approach and Arrhenius analysis. Using a rigorous, mean-field evolution model, we demonstrate the applicability of the two approaches to obtaining the hydrogen DOS in silicon films. We further validate both methods by analyzing experimental fractional evolution data foran amorphous silicon carbide film. Both types of analysis yield a similar double peaked density of states for the a-Si:C:H:D film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 147
Copyright
Copyright © Materials Research Society 1997

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References

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