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Published online by Cambridge University Press: 26 February 2011
A quantitative determination of the contributions of the triply-negatively charged Ga vacancies and of the doubly-positively charged Ga self-interstitials
to Ga self-diffusion coefficient in GaAs has been carried out. Unde thermal equilibrium and intrinsic conditions, the
contribution is characterized by an activation enthalpy of 6 eV for As-rich crystals and of 7.52 eV for Ga-rich crystals, while the
contribution is characterized by an activation enthalpy of 4.89 eV for As-rich crystals and of 3.37 eV for Ga-rich crystals.