Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-25T10:00:27.207Z Has data issue: false hasContentIssue false
  • English
  • Français

Determination of Drift, Extended State Mobility and Recombination Lifetime in Compensated a-Si:H by Photomixing

Published online by Cambridge University Press:  01 January 1993

Yi Tang ,
R. Braunstein ,
Bolko Von Roedern  and
F.R. Shapiro
Yi Tang
Affiliation:
Department Physics, University of California, Los Angeles, CA 90024
R. Braunstein
Affiliation:
Department Physics, University of California, Los Angeles, CA 90024
Bolko Von Roedern
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, CO 80401-3393
F.R. Shapiro
Affiliation:
Department of Electrical and Computer Engineering, Drexel University, Phila., PA 19104
Get access

Abstract

Mobilities of a series of compensated a-Si:H samples, measured earlier by the time-of-flight technique [1], were determined by the technique of photomixing. We have found that both the extended state and the drift mobilities decrease as the compensation increases. Modelling these transport processes in the context of the photomixing technique, it is shown that long-range potential fluctuations can account for the decrease in the extended state mobility in compensated samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 407
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Howard, J. A. and Street, R. A., Phys. Rev. B 44, 7935 (1991).Google Scholar
2. Fritzsche, H., J. Non-cryst. Solids 6, 49 (1971).Google Scholar
3. Overhof, H. and Beyer, W., Phil. Mag. B 43, 433 (1981).Google Scholar
4. Branz, H. M and Silver, M., Phys. Rev. B 42, 7420 (1990).Google Scholar
5. von Roedern, B. and Madan, A., Phil. Mag. B 63, 293 (1991).Google Scholar
6. Overhof, H., Proc. Material Research Spring Meeting (April, 1992), San Francisco, CA, 258, 681.Google Scholar
7. Staebler, D. L and Wronski, C. R, Appl. Phys. Lett. 31, 292 (1985).Google Scholar
8. Geissinger, E. R, Braunstein, R., Dong, S. and Martin, B. G, J. Appl. Phys. 69, 1469 (1991).Google Scholar
9. Tang, Yi, Braunstein, R., and B. von Roedern, , Proc. Material Research Spring Meeting (April, 1992), San Francisco, CA, 258, 735.Google Scholar
10. Braunstein, R. and , Yi Tang, Proceeding of 21st International Conference on Physics of Semiconductors (To be published).Google Scholar
11. Oheda, H., J. Appl. Phys. 52, 6693 (1981).Google Scholar
12. Brtiggemann, R., Main, C., Berkin, J. and Reynolds, S., Phil. Mag. B 62, 29 (1990).Google Scholar
13. Brtiggemann, R. (private communication) pointed out that there is a numerical error in Ref. 11 (Eq. 17) that was transferred to Ref. 9 (Eq. 5 and 11). Upon correction of this error in Ref. 9, the drift mobility, as a direct experimentally measurable quantity does not change in any way, the derived quantities (extended state mobility, Epsilon and capture rate) change insignificantly.Google Scholar
14. von Roedern, B., Appl. Phys. Comm. 12, 45 (1993).Google Scholar
15. Crandall, R. S, Phys. Rev. A 138, 1242 (1965).Google Scholar
16. Tiedje, T. and Rose, A., Solid State Comm. 37, 49 (1980).Google Scholar