Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-16T17:08:22.601Z Has data issue: false hasContentIssue false
  • English
  • Français

Determination of Diffusion Length of Carriers in Graphene Using Contactless Photoelectromagnetic Method of Investigations

Published online by Cambridge University Press:  09 February 2015

Marian Nowak ,
Barbara Solecka  and
Marcin Jesionek
Marian Nowak
Affiliation:
Institute of Physics - Center for Science and Education, Silesian University of Technology, Krasińskiego 8, 40-019 Katowice, Poland
Barbara Solecka
Affiliation:
Institute of Physics - Center for Science and Education, Silesian University of Technology, Krasińskiego 8, 40-019 Katowice, Poland
Marcin Jesionek
Affiliation:
Institute of Physics - Center for Science and Education, Silesian University of Technology, Krasińskiego 8, 40-019 Katowice, Poland
Get access

Abstract

The photoelectromagnetic (PEM) investigations are proposed for determination of diffusion length of carriers in graphene. The presented measurements are performed in Corbino configuration using noncontact technique. The circular PEM currents are detected in an outer coil by induction if illumination intensity is periodically varied. The theoretical dependence of PEM response on magnetic field induction, intensity and spatial distribution of illumination as well as on frequency of illumination chopping is presented. Experimental PEM data are presented for graphene films grown by CVD processing on a cooper foil and transferred onto a glass substrate. The presented method of investigations should be essential for development of graphene electronic and optoelectronic devices.

Keywords

optoelectronicelectronic materialnanostructure
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1727: Symposium K – Graphene and Graphene Nanocomposites , 2015 , mrsf14-1727-k06-06
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Bonaccorso, F., Sun, Z., Hasan, T., Ferrari, A. C., Nature Photonics, 4, 611–622 (2010).CrossRefGoogle Scholar
Nowak, M., Progr. Quantum Electron., 11, 205–346 (1987).CrossRefGoogle Scholar
Mette, H., “Corbino-PME effect as a possible tool for microelectronic materials evaluation: Theory”, Technical Report ECOM-2652 (1966)Google Scholar
Hlavka, J., Rev.. Sci. Instrum. 52, 60–62 (1981).CrossRefGoogle Scholar
Hlavka, J., Rev.. Sci. Instrum. 54, 1386–1391 (1983).CrossRefGoogle Scholar
Sablikov, V.A. and Sandomirsky, V.B., Semicond. Sci. Technol. 6, 989–994 (1991).CrossRefGoogle Scholar
Choo, S.C., Etchells, A.M. and Watt, L.A.K., Phys.Rev. B 4, 4499–4511 (1971).CrossRefGoogle Scholar
Sangwan, V.K., Jariwala, D., Everaerts, K., McMorrow, J.J., He, J., Grayson, M., Lauhon, L.J., Marks, T.J. and Hersam, M.C., Appl. Phys. Lett. 104, 083503 (2014).CrossRefGoogle Scholar