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Detection of Point Defect Chains in Ion Irradiated Silicon by High Resolution Electron Microscopy

Published online by Cambridge University Press:  15 February 2011

W. Krakow ,
T.Y. Tan  and
H. Foell
W. Krakow
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, N.Y. 10598 U.S.A.
T.Y. Tan
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, N.Y. 10598 U.S.A.
H. Foell
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, N.Y. 10598 U.S.A.
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Abstract

In a lattice imaging study of As+ ion damaged Si, we have detected =110> chain type defects which are not associated with any significant strain or configurational changes. By image matching of the experimental and calculated micrographs of vacancies and interstitials, it is established that about 100% more interstitial atoms may incorporate into a defective chain. A structure model of this defect is proposed wherein a di-interstitial, occupying the =100> split position, is incorporated into every available site along a =110> chain.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 2: Symposium – Defects in Semiconductors I , 1980 , 185
Copyright
Copyright © Materials Research Society 1981

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References

REFERENCES

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