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Detection Limit of Large Area Id Thin Film Position Sensitive Detectors Based in a-Si:H P.I.N. Diodes

Published online by Cambridge University Press:  15 February 2011

R. Martins ,
G. Lavareda ,
F. Soares  and
E. Fortunato
R. Martins
Affiliation:
Materials Science Dep., Faculty of Science and Technology of New University of Lisbon and Centre of Excellence for Microelectronics and Optoelectronic Processes - CEMOP-UNINOVA Quinta da Torre, P-2825 Monte de Caparica, Portugal
G. Lavareda
Affiliation:
Materials Science Dep., Faculty of Science and Technology of New University of Lisbon and Centre of Excellence for Microelectronics and Optoelectronic Processes - CEMOP-UNINOVA Quinta da Torre, P-2825 Monte de Caparica, Portugal
F. Soares
Affiliation:
Materials Science Dep., Faculty of Science and Technology of New University of Lisbon and Centre of Excellence for Microelectronics and Optoelectronic Processes - CEMOP-UNINOVA Quinta da Torre, P-2825 Monte de Caparica, Portugal
E. Fortunato
Affiliation:
Materials Science Dep., Faculty of Science and Technology of New University of Lisbon and Centre of Excellence for Microelectronics and Optoelectronic Processes - CEMOP-UNINOVA Quinta da Torre, P-2825 Monte de Caparica, Portugal
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Abstract

The aim of this work is to provide the basis for the interpretation of the steady state lateral photoeffect observed in p-i-n a-Si:H ID Thin Film Position Sensitive Detectors (ID TFPSD). The experimental data recorded in ID TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 791
Copyright
Copyright © Materials Research Society 1995

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References

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