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A Detailed Study of Void Motion In Passivated Aluminum Interconnects

Published online by Cambridge University Press:  10 February 2011

Jonathan C. Doan ,
John C. Bravman ,
Paul A. Flinn  and
Thomas N. Marieb
Jonathan C. Doan
Affiliation:
Materials Science and Engineering Department, Stanford University, Stanford, CA 94305
John C. Bravman
Affiliation:
Materials Science and Engineering Department, Stanford University, Stanford, CA 94305
Paul A. Flinn
Affiliation:
Materials Science and Engineering Department, Stanford University, Stanford, CA 94305
Thomas N. Marieb
Affiliation:
Components Research, Intel Corporation, Santa Clara, CA 95054
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Abstract

Void motion can be an important part of electromigration failure in interconnects. Investigating this process is difficult due to the large variation in behavior in identical samples tested under identical conditions. To deal with the large variability, we have tested 50 samples to failure at four different accelerated test conditions. Because our automated, in-situ technique images an entire test structure, the complete history of a test line is recorded. By testing many samples under direct observation, the complex motion of electromigration voids was comprehensively studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 563: Symposium M – Materials Reliability in Microelectronics IX , 1999 , 103
Copyright
Copyright © Materials Research Society 1999

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