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A Detailed Procedure for Reliable Preparation of Tem Samples Using Fib Milling

Published online by Cambridge University Press:  10 February 2011

D. H.-I Su
Affiliation:
Materials Analysis Group, Philips Semiconductors, 811 E. Arques Ave. M/S65, Sunnyvale, CA 94088
H. T. Shishido
Affiliation:
LSI Logic Corporation, 1551 McCarthy Blvd M/S K303, Milpitas, CA 95035
F. Tsai
Affiliation:
Materials Analysis Group, Philips Semiconductors, 811 E. Arques Ave. M/S65, Sunnyvale, CA 94088
L. Liang
Affiliation:
Precision TEM Inc.45020 Pawnee Dr., Femont, CA 94539
F. C. Mercado
Affiliation:
Materials Analysis Group, Philips Semiconductors, 811 E. Arques Ave. M/S65, Sunnyvale, CA 94088
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Abstract

Although many publications have discussed focused ion beam (FIB) preparation of TEM samples, few have presented a detailed, step-by-step milling procedure. This is a summary of techniques that evolved over the past 3 years in our laboratory. In addition to describing more traditional mechanical pre-thinning techniques, we introduce a method to pre-thin samples down to thicknesses of the order of 20 μm within 1 hour using a wafer dicing saw. We then discuss different ways to handle mechanically difficult samples such as those prone to delaminate. Our approach to FIB milling is designed to minimize the effects of ion-beam spreading which is responsible for most of the failures to prepare good FIBTEM samples. The technique is presented in a step-by-step fashion including a simple yet reliable method to terminate FIB milling. Examples are shown to illustrate applications to different types of problems including - precision cross-sectioning of integrated circuit (IC) devices, cross-sectioning of samples prone to delamination, and cross-sectioning of specific defect sites. Finally, we discuss the effect of artifacts in the quality of TEM samples.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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References

1. Young, R.J., , E.C.G., Williams, D.A., and Ahmed, H., in Specimen Preparation for Transmission Electron Microscopy of Materials - II, edited by Anderson, R. (Mater. Res. Soc. Proc. 199, San Francisco, California, 1990), pp. 205216.Google Scholar
2. Basile, , Boylan, R., Baker, B., Hayes, Kathy, and Soza, David, in Specimen Preparation for Transmission Electron Microscopy of Materials - III, edited by Anderson, R., Tracy, B., Bravman, J. (Mater. Res. Soc. Proc. 254, Boston, Massachussetts, 1992), pp. 2341.Google Scholar
3. Herlinger, L.R., Chevacharoenkul, S. and Erwin, D.C. in Proceedings of the 22nd International Symposium for Testing and Failure Analysis (ASM International, Ohio, 1996). p. 199.Google Scholar
4. Humiston, H.L., Tracy, B.M., Lawrence, M. Dass, A., in Specimen Preparation for Transmission Electron Microscopy of Materials - III, edited by Anderson, R., Tracy, B., Bravman, J. (Mater. Res. Soc. Proc. 254, Boston, Massachussetts, 1992), pp. 211221.Google Scholar
5. Benedict, J., Anderson, R., and Klepeis, S. J., in Specimen Preparation for Transmission Electron Microscopy of Materials - III, edited by Anderson, R., Tracy, B., Bravman, J. (Mater. Res. Soc. Proc. 254, Boston, Massachussetts, 1992), pp. 121140.Google Scholar
6. Pantel, , Auvert, G., Mascarin, G. and Gonchond, J.P., Proceedings of the International Congress of Electron Microscopy, p. 1007, Paris (1994).Google Scholar
7. Overwijk, , Heuvel, F.C. van den, and Bulle-Lieuwma, C.W.T., J. Vac. Sci. Technol. B 11(6), 2021 (1993).Google Scholar