Hostname: page-component-586b7cd67f-gb8f7 Total loading time: 0 Render date: 2024-11-25T17:40:12.774Z Has data issue: false hasContentIssue false
  • English
  • Français

Detailed Characterisations of GaAs Films on Si Obtained by Conformal Growth.

Published online by Cambridge University Press:  25 February 2011

B. Gerard ,
D. Pribat ,
R. Bisaro ,
E. Costard ,
J. Nagle ,
J. Ricciardi  and
M. Dupuy
B. Gerard
Affiliation:
THOMSON-CSF, Central labs, 91404 Orsay Cedex, France
D. Pribat
Affiliation:
THOMSON-CSF, Central labs, 91404 Orsay Cedex, France
R. Bisaro
Affiliation:
THOMSON-CSF, Central labs, 91404 Orsay Cedex, France
E. Costard
Affiliation:
THOMSON-CSF, Central labs, 91404 Orsay Cedex, France
J. Nagle
Affiliation:
THOMSON-CSF, Central labs, 91404 Orsay Cedex, France
J. Ricciardi
Affiliation:
THOMSON-CSF, Central labs, 91404 Orsay Cedex, France
M. Dupuy
Affiliation:
LETVCPM, Bp 85 X, 38041 Grenoble Cedex, France.
Get access

Abstract

Conformal growth is a confined epitaxial lateral overgrowth technique capable of yielding low dislocation density GaAs films on Si. This technique makes extensive use of selective epitaxy and crystal growth is confined by a dielectric cap as well as by the self-passivated Si surface itself.

In this paper, we have performed a detailed characterisation of the state of stress of the GaAs films in various configurations (after conformal growth and removal of the seed regions, and after the regrowth of an MBE layer) by photoluminescence measurements at 5K and X-ray diffraction experiments. Although the as-grown conformal films are found in the same state of stress than reference MOCVD GaAs epilayers on Si, we report a significant decrease of this stress after MBE regrowth on conformal films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 675
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Pribat, D., Gérard, B., Dupuy, M. and Legagneux, P., Appl. Phys. Lett. 60, 2144 (1992).Google Scholar
2. Theeten, J., Hollan, L. and Cadoret, R., in 1976 Crystal Growth and Materials, edited by Kaldis, E. and Scheel, H.J. (North Holland, Amsterdam, 1977), p. 195.Google Scholar
3. Abrahams, M.S. and Buiocchi, C.J., J. Appl. Phys. 36, 2855 (1965).Google Scholar
4. Fang, S.F., Adomi, K., Iyer, S., Morkoc, H., Zabel, H., Choi, C. and Otsuka, N., J. Appl.Phys. 68 (7), 31 (1990).CrossRefGoogle Scholar
5. Zemon, S., Shastry, S.K., Norris, P., Jagannath, C., and Lambert, G., Solid State Commun. 58, 457 (1986).CrossRefGoogle Scholar
6. Lingunis, E.H., Haegel, N.M. and Karam, N.H., Solid State Commun. 76, 303 (1990).CrossRefGoogle Scholar
7. Lee, H.P., Liu, X., Lin, H., Smith, J.S., Wang, S., Huang, Y-H., Yu, P., and Huang, Y-Z., Appl. Phys. Lett. 53, 2394, (1988).Google Scholar
8. Bartels, W.J. and Nijman, W., J. Cryst.Growth, 44 (5), 513 (1978).Google Scholar
9. Madelung, O.. Schulz, M. and Weiss, H., Eds., Landolt-Bornstein Bd. 17a Semiconductors (Springer, Berlin, 1982).Google Scholar