Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-25T17:44:19.406Z Has data issue: false hasContentIssue false
  • English
  • Français

Design of a Compact Negative Metal Ion Beam Source for Surface Studies

Published online by Cambridge University Press:  21 February 2011

Y. Park ,
Y.W. Ko ,
M.H. Sohn  and
S.I. Kim
Y. Park
Affiliation:
Department of Physics and Engineering Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030
Y.W. Ko
Affiliation:
Department of Physics and Engineering Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030
M.H. Sohn
Affiliation:
Department of Physics and Engineering Physics, Stevens Institute of Technology, Hoboken, New Jersey 07030
S.I. Kim
Affiliation:
SKION Corporation, 612 River St., Hoboken New Jersey 07030
Get access

Abstract

A compact negative metal ion beam source for direct low energy metal ion beam depositions studies in ultra high vacuum (UHV) environment, has been developed. The ion source is based on SKION's Solid State Ion Beam Technology. The secondary negative metal ion beam is effectively produced by primary cesium positive ion bombardment (negative ion yield varies from 0.1-0.5 for carbon). The beam diameter is in the range of 0.2∼3.0 cm depending on the focusing and ion beam energy. The ion source produces negative ion currents of about 0.8 mA/cm2. The energy spread of the ion beam is less then ±5% of the ion beam energy. The energy of negative metal ion beam can be independently controlled in the range of 10-300 eV. Due to the complete solid state ion technology , the source can be operated while maintaining chamber pressures of less then 10-10 Torr.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 396: Symposium A – Ion-Solid Interactions for Materials Modification and Processing , 1995 , 623
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Alton, G. D., Rev. Sci. Instrum. 63 4, 2450 (1992).Google Scholar
2 Yoshiharu, , Rev. Sci. Instrum. 63 4, 2357 (1992).Google Scholar
3 Ishikawa, J., Rev. Sci. Instrum. 63 4, p.2368 (1992).Google Scholar
4 Pargellis, A. and Seidl, M., J. Vac. Sci. Technol. A1 3, 1388 (1983).Google Scholar
5 Tompa, G. S., Carr, W.E. and Seidl, M., Appl. Phys. Lett. 48 16, 1048 (1986).Google Scholar
6 Ko, Y. W., Ahn, Y. O., Sohn, M. H., Park, Y. and Kim, S. I., presented at 1995 MRS Fall Meeting, Boston, MA, 1995.Google Scholar
7 Kim, S. I. and Seidl, M., J. Vac. Sci. Technol. A7 3, 5671 (1989).Google Scholar
8 Kim, S. I. and Seidl, M., J. Appl. Phys. 67 6, 2704 (1990).Google Scholar
9 Kim, S. I., Ahn, Y. O. and Seidl, M., Rev. Sci. Instrum. 63 12, 5671 (1992).Google Scholar
10 Herrmannfeldt, W., Becker, R. and Brodie, I., SLAC-PUB-5217, 1990.Google Scholar
11 Dahl, D. A. and Delmore, J. E., SIMION Ver. 4.0, Idaho Natl. Eng. Lab., EG&G Idaho INC.Google Scholar
12 Ishikawa, J., presented at 6th. International Conference on Ion Source, Sep. 1995, to be published in Rev. Sci. Instrum.Google Scholar