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Design Consideration of GaN-Based Surface Emitting Lasers
Published online by Cambridge University Press: 10 February 2011
Abstract
The threshold current density of GaN-based vertical cavity surface emitting lasers (VCSELs) has been estimated. It is clarified that the introduction of a quantum well structure as an active layer is very effective for a low threshold operation and that high reflective mirrors are required for low threshold GaN-based VCSELs. Also, attempts on micro-fabrication process of GaN is presented.
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- Copyright © Materials Research Society 1997
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