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Depth Profiling of SiC Lattice Damage Using Micro-Raman Spectroscopy

Published online by Cambridge University Press:  21 March 2011

Iulia C. Muntele ,
Daryush Ila ,
Claudiu I. Muntele ,
David B. Poker  and
Dale K. Hensley
Iulia C. Muntele
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL – 35762, U. S. A.
Daryush Ila
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL – 35762, U. S. A.
Claudiu I. Muntele
Affiliation:
Center for Irradiation of Materials, Alabama A&M University, Normal, AL – 35762, U. S. A.
David B. Poker
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN, U. S. A.
Dale K. Hensley
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN, U. S. A.
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Abstract

Depth profiling for the amount of lattice damage using a Confocal Micro-Raman (CMR) spectrometer is demonstrated in this paper. Samples of n-type silicon carbide were implanted with 2 MeV He and O ions at both room temperature and 500 °C, and fluences between 1015 and 1017 ions/cm2. Post-implantation annealing at 1000 °C was also performed in order to study the damage evolution. Optical Absorption Spectrophotometry (OAS) was used for establishing the opacity (and therefore the probing depth) of the damaged layer to the 632.8 nm wavelength of the He-Ne laser used for CMR throughout this study. The methodology used and the results obtained are presented herein. Total dissipation of amorphous carbon islands was observed even at low annealing temperatures of the RT implanted samples, along with an increase in the size of the amorphous silicon islands.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H6.6.1
Copyright
Copyright © Materials Research Society 2002

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