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Deposition Temperature and Optoelectronic Properties of a-Si:H Films

Published online by Cambridge University Press:  21 February 2011

C. S. Wiatkowski ,
W. Hirsch  and
O. Kunst
C. S. Wiatkowski
Affiliation:
Hahn-Meitner-Institut, dept SI: Solare Energetik, Glienicker Straβe 100, 1000 Berlin 39, Germany
W. Hirsch
Affiliation:
Hahn-Meitner-Institut, dept SI: Solare Energetik, Glienicker Straβe 100, 1000 Berlin 39, Germany
O. Kunst
Affiliation:
Hahn-Meitner-Institut, dept SI: Solare Energetik, Glienicker Straβe 100, 1000 Berlin 39, Germany
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Abstract

In the present work the change of the opto-electronic properties of intrinsic a-Si:H films as a function of their deposition temperature is investigated by transient photoconductivity measurements with the contactless Time Resolved Microwave Conductivity (TRMC) technique. As well in-situ as ex-situ TRMC-measurements will be presented. It is concluded that the electron drift mobility for a-Si:H films deposited in the temperature range between 200° C and 300° C does not depend on the deposition temperature. For temperatures below 200° C the electron drift mobility decreases with decreasing deposition temperature. Annealing of opto-electronic properties of intrinsic a-Si:H films deposited at lower temperatures is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 75
Copyright
Copyright © Materials Research Society 1992

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References

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