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Deposition Rate Effect on Critical Thickness of BaTiO3 Epitaxial Thin Film Grown on SrTiO3 (001)

Published online by Cambridge University Press:  01 February 2011

Masanori Kawai ,
Daisuke Kan ,
Seiichi Isojima ,
Hiroki Kurata ,
Seiji Isoda ,
Shigeru Kimura ,
Osami Sakata  and
Yuichi Shimakawa
Masanori Kawai
Affiliation:
[email protected], Institute for Chemical Rsearch, Kyoto University, Institute for Chemical Research, Kyoto University, Gokasyo, Uji, 611-011, Japan, +81-774-38-3115, +81-774-38-3118
Daisuke Kan
Affiliation:
[email protected], Institute for Chemical Research, Kyoto University, Gokasyo, Uji, Kyoto, 611-0011, Japan
Seiichi Isojima
Affiliation:
[email protected], Institute for Chemical Research, Kyoto University, Gokasyo, Uji, Kyoto, 611-0011, Japan
Hiroki Kurata
Affiliation:
[email protected], Institute for Chemical Research, Kyoto University, Gokasyo, Uji, Kyoto, 611-0011, Japan
Seiji Isoda
Affiliation:
[email protected], Institute for Chemical Research, Kyoto University, Gokasyo, Uji, Kyoto, 611-0011, Japan
Shigeru Kimura
Affiliation:
[email protected], JASRI/SPring-8, 1-1-1 Kouto, Mikazuki, Sayo-gun, Hyogo, 679-5198, Japan
Osami Sakata
Affiliation:
[email protected], JASRI/SPring-8, 1-1-1 Kouto, Mikazuki, Sayo-gun, Hyogo, 679-5198, Japan
Yuichi Shimakawa
Affiliation:
[email protected], Institute for Chemical Research, Kyoto University, Gokasyo, Uji, Kyoto, 611-0011, Japan
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Abstract

BaTiO3/SrTiO3(001) epitaxial thin films were prepared at various growth rates by pulsed laser deposition, and their heterostructures were evaluated by synchrotron x-ray diffraction measurements and cross-sectional scanning transmission electron microscopy observations. In a film grown at a low deposition rate (0.01 nm/s), misfit dislocations are found near the interface and a fully relaxed BaTiO3 thin film grows epitaxially on the substrate. On the other hand, a film grown at a high deposition rate (0.04 nm/s) consists of strained and relaxed BaTiO3 lattices. Our results showed that the critical thickness of BaTiO3/SrTiO3(001) epitaxial thin films can be controlled by the deposition rate and that the critical thickness increases with increasing the deposition rate, and by adjusting the deposition rate we were able to prepare epitaxial thin films consisting of fully strained BaTiO3, partially strained BaTiO3 or fully relaxed BaTiO3. We have also achieved the growth controlling of BaTiO3 thin films on SrTiO3(001) substrates with SrRuO3 bottom electrode layer.

Keywords

crystal growthx-ray diffraction (XRD)ferroelectricity
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1034 , 2007 , 1034-K10-04
Copyright
Copyright © Materials Research Society 2008

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