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Deposition of tungsten on silicon dioxide by GeH4 reduction of WF6

Published online by Cambridge University Press:  25 February 2011

T. G. M. Oosterlaken ,
G. J. Leusink ,
C. A. van der Jeugd ,
G. C. A. M. Janssen  and
S. Radelaar
T. G. M. Oosterlaken
Affiliation:
Delft University of Technology, DIMES/section submicron technology P.O. box 5046, 2600 G A Delft, The Netherlands
G. J. Leusink
Affiliation:
Delft University of Technology, DIMES/section submicron technology P.O. box 5046, 2600 G A Delft, The Netherlands
C. A. van der Jeugd
Affiliation:
Delft University of Technology, DIMES/section submicron technology P.O. box 5046, 2600 G A Delft, The Netherlands
G. C. A. M. Janssen
Affiliation:
Delft University of Technology, DIMES/section submicron technology P.O. box 5046, 2600 G A Delft, The Netherlands
S. Radelaar
Affiliation:
Delft University of Technology, DIMES/section submicron technology P.O. box 5046, 2600 G A Delft, The Netherlands
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Abstract

Chemical Vapour Deposition of tungsten on silicon dioxide by means of GeH4 reduction of WF6 is studied. The influence of the ambient gas on the nucleation of tungsten is examined. Experiments have been performed in both Ar and H2 ambient. It is found that an Ar ambient hinders nucleation on silicon dioxide in comparison with a hydrogen ambient. Adhesion of the film and uniformity over the wafer are acceptable for the films deposited in hydrogen ambient.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 93
Copyright
Copyright © Materials Research Society 1992

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References

REFErences

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