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Deposition of Titanium Oxide Films from Metal-Organic Precursor by Electron Cyclotron Resonance Plasma-Assisted Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

Atsushi Nagahori  and
Rishi Raj
Atsushi Nagahori
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
Rishi Raj
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
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Abstract

Titanium oxide thin films were deposited at room temperature by the Electron Cyclotron Resonance Plasma-Assisted Chemical Vapor Deposition (ECR-PACVD) method. Effects of deposition temperature, microwave power and plasma gas pressure were investigated. Both Ar and O2 plasma were used to deposit films from titanium isopropoxide (Ti(OC3H7)4) precursor. Transparent titanium oxide films were obtained with O2 plasma. Refractive index and thickness were measured by ellipsometry and the films were characterized by x-ray diffraction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 335: Symposium Y – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics , 1993 , 117
Copyright
Copyright © Materials Research Society 1994

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References

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