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Deposition of tin oxides by Ion-Beam-Sputtering

Published online by Cambridge University Press:  18 December 2012

Martin Becker
Affiliation:
1st Physics Institute, Justus-Liebig University, Heinrich-Buff-Ring 16, 35392 Giessen, Germany
Angelika Polity
Affiliation:
1st Physics Institute, Justus-Liebig University, Heinrich-Buff-Ring 16, 35392 Giessen, Germany
Davar Feili
Affiliation:
1st Physics Institute, Justus-Liebig University, Heinrich-Buff-Ring 16, 35392 Giessen, Germany
Bruno K. Meyer
Affiliation:
1st Physics Institute, Justus-Liebig University, Heinrich-Buff-Ring 16, 35392 Giessen, Germany
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Abstract

Synthesis of both p-type and n-type oxide semiconductors is required to develop oxide-based electronic devices. Tin monoxide (SnO) recently has received increasing attention as an alternative p-type oxide semiconductor because it is a simple binary compound consisting of abundant elements. Another phase of the tin oxygen system, SnO2, is of great technological interest as transparent electrodes and as heat-reflecting filters. The preparation of tin oxide thin films has been performed by many different procedures. Radio-frequency (RF) ion-thrusters, as designed for propulsion applications, are also qualified for thin film deposition and surface etching, because different gas mixtures, extraction voltages and RF power can be applied. Tin oxide thin films were grown by ion beam sputtering (IBS) using a 3” metallic tin target. Different aspects of the thin film growth and properties of the tin oxide phases were investigated in relation to flux of oxygen fed into the gas discharge in the ion thruster. Results on thin film growth by IBS will be presented, structural, vibrational and optical properties of the films will be discussed.

Type
Articles
Copyright
Copyright © Materials Research Society 2012 

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References

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