Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-23T15:26:23.407Z Has data issue: false hasContentIssue false
  • English
  • Français

Deposition of tin oxides by Ion-Beam-Sputtering

Published online by Cambridge University Press:  18 December 2012

Martin Becker ,
Angelika Polity ,
Davar Feili  and
Bruno K. Meyer
Martin Becker
Affiliation:
1st Physics Institute, Justus-Liebig University, Heinrich-Buff-Ring 16, 35392 Giessen, Germany
Angelika Polity
Affiliation:
1st Physics Institute, Justus-Liebig University, Heinrich-Buff-Ring 16, 35392 Giessen, Germany
Davar Feili
Affiliation:
1st Physics Institute, Justus-Liebig University, Heinrich-Buff-Ring 16, 35392 Giessen, Germany
Bruno K. Meyer
Affiliation:
1st Physics Institute, Justus-Liebig University, Heinrich-Buff-Ring 16, 35392 Giessen, Germany
Get access

Abstract

Synthesis of both p-type and n-type oxide semiconductors is required to develop oxide-based electronic devices. Tin monoxide (SnO) recently has received increasing attention as an alternative p-type oxide semiconductor because it is a simple binary compound consisting of abundant elements. Another phase of the tin oxygen system, SnO2, is of great technological interest as transparent electrodes and as heat-reflecting filters. The preparation of tin oxide thin films has been performed by many different procedures. Radio-frequency (RF) ion-thrusters, as designed for propulsion applications, are also qualified for thin film deposition and surface etching, because different gas mixtures, extraction voltages and RF power can be applied. Tin oxide thin films were grown by ion beam sputtering (IBS) using a 3” metallic tin target. Different aspects of the thin film growth and properties of the tin oxide phases were investigated in relation to flux of oxygen fed into the gas discharge in the ion thruster. Results on thin film growth by IBS will be presented, structural, vibrational and optical properties of the films will be discussed.

Keywords

ion-beam processingoxidestructural
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1494: Symposium Z – Oxide Semiconductors and Thin Films , 2013 , pp. 153 - 158
Copyright
Copyright © Materials Research Society 2012 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Oyabu, T., “Sensing characteristics of SnO2 thin film gas sensor,” Journal of Applied Physics 53, 2785 (1982).CrossRefGoogle Scholar
Sangaletti, L., Depero, L., Dieguez, A., Marca, G., Morante, J., Romano-Rodriguez, A., and Sberveglieri, G., “Microstructure and morphology of tin dioxide multilayer thin film gas sensors,” Sensors and Actuators B: Chemical 44, 268–274 (1997).CrossRefGoogle Scholar
Min, B. K. and Choi, S. D., “SnO2 thin film gas sensor fabricated by ion beam deposition,” Sensors and Actuators B: Chemical 98, 239–246 (2004).CrossRefGoogle Scholar
Feng, T., Ghosh, A. K., and Fishman, C., “Spray-deposited high-efficiency SnO2/n-Si solar cells,” Applied Physics Letters 35, 266 (1979).CrossRefGoogle Scholar
Nang Dinh, N., Bernard, M.-C., Hugot-Le Goff, A., Stergiopoulos, T., and Falaras, P., “Photoelectrochemical solar cells based on SnO2 nanocrystalline films,” Comptes Rendus Chimie 9, 676–683 (2006).CrossRefGoogle Scholar
Ogo, Y., Hiramatsu, H., Nomura, K., Yanagi, H., Kamiya, T., Hirano, M., and Hosono, H., “p-channel thin-film transistor using p-type oxide semiconductor, SnO,” Applied Physics Letters 93, 032113 (2008).CrossRefGoogle Scholar
Togo, A., Oba, F., Tanaka, I., and Tatsumi, K., “First-principles calculations of native defects in tin monoxide,” Phys. Rev. B 74, 195128 (2006).CrossRefGoogle Scholar
Kohler, R., Besser, H., Hagen, M., Ye, J., Ziebert, C., Ulrich, S., Proell, J., and Pfleging, W., “Laser micro-structuring of magnetron-sputtered SnO2 thin films as anode material for lithium ion batteries,” Microsystem Technologies 17, 225–232 (2011).CrossRefGoogle Scholar
Choi, W., Sung, H., Kim, K., Cho, J., Choi, S., Jung, H.-J., Koh, S., Lee, C., and Jeong, K., “Oxidation process from SnO to SnO2,” Journal of Materials Science Letters 16, 1551–1554 (1997).CrossRefGoogle Scholar
Suzuki, T., Yamazaki, T., Yoshioka, H., and Hikichi, K., “Influence of thickness on H2 gas sensor properties in polycrystalline SnO2 films prepared by ion-beam sputtering,” Journal of Materials Science 23, 1106–1111 (1988).CrossRefGoogle Scholar
Yu, P. Y., Shen, Y. R., Petroff, Y., and Falicov, L. M., “Resonance Raman Scattering at the Forbidden Yellow Exciton in Cu2O,” Physical Review Letters 30, 283–286 (1973).CrossRefGoogle Scholar
Freisinger, J., Heland, J., Kramer, D., Loeb, H., and Scharmann, A., “Performance of the rf-ion sources RIM for reactive and nonreactive gases,” Review of Scientific Instruments 63, 2571 –2573 (1992).CrossRefGoogle Scholar
Tauc, J., Grigorovici, R., and Vancu, A., “Optical Properties and Electronic Structure of Amorphous Germanium,” physica status solidi (b) 15, 627–637 (1966).CrossRefGoogle Scholar
Geurts, J., Rau, S., Richter, W., and Schmitte, F. J., “SnO films and their oxidation to SnO2: Raman scattering, IR reflectivity and X-ray diffraction studies,” Thin Solid Films 121, 217–225 (1984).CrossRefGoogle Scholar
Peltzer y Blancá, E. L., Svane, A., Christensen, N. E., Rodríguez, C. O., Cappannini, O. M., and Moreno, M. S., “Calculated static and dynamic properties of β-Sn and Sn-O compounds,” Phys. Rev. B 48, 15712–15718 (1993).CrossRefGoogle Scholar
Katiyar, R. S., Dawson, P., Hargreave, M. M., and Wilkinson, G. R., “Dynamics of the rutile structure. III. Lattice dynamics, infrared and Raman spectra of SnO2,” Journal of Physics C: Solid State Physics 4, 2421–2431 (1971).CrossRefGoogle Scholar
Abello, L., Bochu, B., Gaskov, A., Koudryavtseva, S., Lucazeau, G., and Roumyantseva, M., “Structural Characterization of Nanocrystalline SnO2by X-Ray and Raman Spectroscopy,” Journal of Solid State Chemistry 135, 78–85 (1998).CrossRefGoogle Scholar
Diéguez, A., Romano-Rodríguez, A., Vilà, A., and Morante, J. R., “The complete Raman spectrum of nanometric SnO2 particles,” Journal of Applied Physics 90, 1550–1557 (2001).CrossRefGoogle Scholar
Li, F. M., Waddingham, R., Milne, W. I., Flewitt, A. J., Speakman, S., Dutson, J., Wakeham, S., and Thwaites, M., “Low temperature (<100°C) deposited P-type cuprous oxide thin films: Importance of controlled oxygen and deposition energy,” Thin Solid Films 520, 1278–1284 (2011).CrossRefGoogle Scholar
Shannon, R. D., “Refractive Index and Dispersion of Fluorides and Oxides,” Journal of Physical and Chemical Reference Data 31, 931 (2002).CrossRefGoogle Scholar