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Deposition of Polycrystalline ZnO Films by Two-Step Method and Characterization of Thermal Annealing Effects

Published online by Cambridge University Press:  01 February 2011

Jin-Bock Lee ,
Myung-Ho Lee ,
Hye-Jung Lee  and
Jin-Seok Park
Jin-Bock Lee
Affiliation:
Department of Electrical Engineering, Hanyang University 1271 Sa 1-dong, Ansan, Kyonggi-do 425-791, South Korea
Myung-Ho Lee
Affiliation:
Department of Electrical Engineering, Hanyang University 1271 Sa 1-dong, Ansan, Kyonggi-do 425-791, South Korea
Hye-Jung Lee
Affiliation:
Department of Electrical Engineering, Hanyang University 1271 Sa 1-dong, Ansan, Kyonggi-do 425-791, South Korea
Jin-Seok Park
Affiliation:
Department of Electrical Engineering, Hanyang University 1271 Sa 1-dong, Ansan, Kyonggi-do 425-791, South Korea
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Abstract

Polycrystalline ZnO thin films were deposited on SiO2/Si(100) substrate using RF magnetron sputtering. The film deposition performed in this work was composed of following two procedures; the 1st-deposition for 30 min without oxygen at 100 W and the 2nd-deposition with oxygen in the range O2/(Ar+O2) = 10∼50 %. Deposited ZnO films revealed a strongly c-axis preferred-orientation (the corresponding texture coefficient ∼ 100 %) as well as a high resistivity (> 107 Ωcm). It was also observed that the crystallite size of ZnO was noticeably increased by thermal-annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 720: Symposium H – Materials Issues for Tunable RF and Microwave Devices III , 2002 , H3.13
Copyright
Copyright © Materials Research Society 2002

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