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Deposition of Nano-Scale Ga Dots onto HF-Treated Si(111) Using a Scanning Tunneling Microscope

Published online by Cambridge University Press:  25 February 2011

Katsuhiro Uesugi ,
Kiyoshi Sakata ,
Seiji Kawano ,
Masamichi Yoshimura  and
Takafumi Yao
Katsuhiro Uesugi
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
Kiyoshi Sakata
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
Seiji Kawano
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
Masamichi Yoshimura
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
Takafumi Yao
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
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Abstract

Nano-scale Ga dots are deposited through the decomposition of triethylgallium (TEGa) adsorbed on HF-treated Si(111) surfaces using a scanning tunneling microscope (STM). The deposition of Ga dots of 2–13 nm in diameter is achieved by applying a negative voltage pulse to the sample, while no deposition is observed when a positive voltage pulse is applied. The conditions for Ga deposition are systematically investigated by varying the gap conductance, pulse height, and pulse width. A tentative model for the mechanism of Ga deposition is proposed, in which TEGa molecules are decomposed by the electric field between the tip and the sample.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 605
Copyright
Copyright © Materials Research Society 1993

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