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Deposition of II/VI thin films from Novel Single-Source Precursors

Published online by Cambridge University Press:  11 February 2011

Mohammad Afzaal ,
Mohammad Azad Malik ,
Paul O'Brien  and
Jin-Ho Park
Mohammad Afzaal
Affiliation:
The Manchester Materials Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK. E-mail: [email protected]; [email protected]
Mohammad Azad Malik
Affiliation:
The Manchester Materials Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK. E-mail: [email protected]; [email protected]
Paul O'Brien
Affiliation:
The Manchester Materials Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK. E-mail: [email protected]; [email protected]
Jin-Ho Park
Affiliation:
The Manchester Materials Science Centre and Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK. E-mail: [email protected]; [email protected]
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Abstract

The compound [MeCd(SePiPr2)2N]2 is used as a single-source precursor to cadmium selenide films in a low-pressure chemical vapour deposition process. Thermogravimetric analysis (TGA) shows that the precursor is reasonably volatile, making it suitable for the deposition of thin films. As-deposited films were identified as CdSe confirmed by X-ray powder diffraction (XRPD) and their morphologies were studied by scanning electron microscope (SEM).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M5.21
Copyright
Copyright © Materials Research Society 2003

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References

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