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Deposition of Hydrogenated Si Films by Hydrogenation of the SiO2 Surface and Hydrogen Dilution with PE-CVD and ECR-CVD

Published online by Cambridge University Press:  15 February 2011

Kun-Chih Wang ,
Tri-Rung Yew  and
Huey-Liang Hwang
Kun-Chih Wang
Affiliation:
Department of Electrical Engineering, National Tsing-Hua University, Hsinchu, Taiwan, 30043, ROC.
Tri-Rung Yew
Affiliation:
Materials Science Center, National Tsing-Hua University, Hsinchu, Taiwan, 30043, ROC.
Huey-Liang Hwang
Affiliation:
Department of Electrical Engineering, National Tsing-Hua University, Hsinchu, Taiwan, 30043, ROC.
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Abstract

This paper presents the results of low temperature deposition of poly-Si films deposited on SiO2 layers. Hydrogen dilution, hydrogen atom treatment, and hydrogenation of the SiO2 surface steps were applied to deposit the Si films. The above treatment steps were usually used in the plasma enhanced chemical vapor deposition and they were extended to be used in the electron cyclotron resonance chemical vapor deposition to identify the grain growth effects. The nucleation and microstructure of the silicon films were observed by cross-section transmission electron microscopy (XTEM).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 345: Symposium M – Flat Panel Display Materials , 1994 , 117
Copyright
Copyright © Materials Research Society 1994

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References

1. Staebler, D. L. and Wronski, C. R., J. Appl. Phys., 51, 3262 (1980).Google Scholar
2. Hsu, K. C., Chang, H., Hong, C. S., and Hwang, H. L., MRS Symp. Proc. 258, 69 (1992).Google Scholar
3. Hsu, K. C. and Hwang, H. L., Appl. Phys. Lett., 61, 2075 (1992).Google Scholar
4. Hsu, K. C. and Hwang, H. L., MRS Symp. Proc. 259, 67 (1993).Google Scholar
5. Hsu, K. C., Chang, H., and Hwang, H. L., J. Appl. Phys., 73, 4841 (1993).Google Scholar
6. Hsu, K. C., Chen, B. Y., Hsu, H. T., Wang, K. C., Yew, T. R., and Hwang, H. L., Jap. J. Appl. Phys. (1994) (in press).Google Scholar
7. Wang, K. C., Hwang, H. L., Kung, C. Y., and Yew, T. R., Mat. Res. Soc. Symp. Proc., 259, 137 (1992).Google Scholar
8. Wang, K. C., Hwang, H. L., Kung, C. Y., and Yew, T. R., Appl. Phys. Lett. (1994) (in press).Google Scholar