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Deposition of Highly Conductive n+ Silicon Film for a-Si:H Thin Film Transistor

Published online by Cambridge University Press:  10 February 2011

Yue Kuo  and
K. Latzko
Yue Kuo
Affiliation:
Now: Thin Film Microelectronics Research Laboratory, Chemical Engineering Department, Texas A&M University, College Station, TX 77843, [email protected]
K. Latzko
Affiliation:
IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, New York 10598
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Abstract

Plasma enhanced chemical vapor deposition of phosphorus-doped n+ silicon film over a wide range of process conditions has been studied. The deposited films were characterized with SIMS, Raman, and XRD. An unusually abrupt change of resistivity over a small SiH4(1% PH3) flow rate has been observed and was correlated to the variation of the film's morphology from amorphous to micrycrystalline. The grains are less than 50 Å in size and has strong <111> orientation. Amorphous silicon thin film transistors with microcrystalline n+ source and drain contacts have consistently good device characteristics. However, the contact resistance is comparable to the channel resistance when the channel length approaches 1 micrometer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 891
Copyright
Copyright © Materials Research Society 1998

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