Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-05T21:11:59.293Z Has data issue: false hasContentIssue false
  • English
  • Français

Deposition of High Quality Amorphous Silicon by a New “Hot Wire” CVD Technique

Published online by Cambridge University Press:  15 February 2011

Scott Morrison ,
Ken Coates ,
Jianping Xi  and
Arun Madan
Scott Morrison
Affiliation:
MVSystems Inc., 327 Lamb Lane, Golden, Colorado 80401, or 17301 W. Colfax Ave., Suite 305, Golden, CO 80401, USA
Ken Coates
Affiliation:
MVSystems Inc., 327 Lamb Lane, Golden, Colorado 80401, or 17301 W. Colfax Ave., Suite 305, Golden, CO 80401, USA
Jianping Xi
Affiliation:
MVSystems Inc., 327 Lamb Lane, Golden, Colorado 80401, or 17301 W. Colfax Ave., Suite 305, Golden, CO 80401, USA
Arun Madan
Affiliation:
MVSystems Inc., 327 Lamb Lane, Golden, Colorado 80401, or 17301 W. Colfax Ave., Suite 305, Golden, CO 80401, USA
Get access

Abstract

For the “Hot Wire” chemical vapor deposition technique (HWCVD) method to be applicable for photovoltaic applications, certain critical technical issues need to be addressed and resolved such as: lifetime of the filaments, reproducibility, large area demonstration of the material and stable devices. We have developed a new approach (patent applied for) which addresses some of these problems, specifically longevity of the filaments and reproducibility of the materials produced. The new filament material used has so far shown no appreciable degradation even after deposition of >200 μm of amorphous silicon (a-Si). We report that this can produce “state-ofthe-art” a-Si with a dark conductivity of <10-10 (Ohm*cm)-1 and photoconductivity of >10-5 (Ohm*cm)-1 this material can also be doped p- or n-type. We also provide data using XRD as well as the Raman spectra. These materials have been incorporated into simple Schottky barrier structures. The development of microcrystalline silicon materials is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 85
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Matsumura, H., Japn. J. Appl. Phys., 8B, L1522, 1991.Google Scholar
2. Madan, A., Xi, J. and Morriosn, S., patent applied for.Google Scholar
3. Puigdollers, J., Bertomeu, I., Cifre, J., Andreu, J. and Delgado, J. C., MRS Proc. 377, 63, (1995)Google Scholar
4. McMahon, T. J. and Madan, A., Appl. Phys. Lett. 57, 5302, (1985).Google Scholar
5. Madan, A., and Shaw, M., The Physics and Applications of Amorphous Semiconductors (Academic Press, New York, 1988): Plasma Deposition of Amorphous Silicon Based Materials, G. Bruno, P. Capezutto, and A. Madan, eds. Academic Press, 1995.Google Scholar