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Deposition of Diamond Films by Scanning Oxy-Acetylene Flame

Published online by Cambridge University Press:  26 February 2011

Yonhua Tzeng ,
Richard Phillips ,
Chin C. Tin ,
Y. Chen ,
T. Srivinyunon  and
Calvin Cutshaw
Yonhua Tzeng
Affiliation:
Department of Electrical Engineering, Auburn University, AL 36849
Richard Phillips
Affiliation:
Department of Electrical Engineering, Auburn University, AL 36849
Chin C. Tin
Affiliation:
Department of Electrical Engineering, Auburn University, AL 36849
Y. Chen
Affiliation:
Department of Electrical Engineering, Auburn University, AL 36849
T. Srivinyunon
Affiliation:
Department of Electrical Engineering, Auburn University, AL 36849
Calvin Cutshaw
Affiliation:
Department of Electrical Engineering, Auburn University, AL 36849
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Abstract

Diamond films have been deposited on silicon wafers by scanning an oxyacetylene flame against water-cooled silicon substrates. High quality diamond films about 20 um thick can be achieved by scanning the flame at a speed of about 0.2 mm per minute. The as-deposited films exhibit high electrical resistivity exceeding 1014Ωcm. Current voltage measurement shows the trap-dominated current conduction characteristics similar to that for dehydrogenated diamond films deposited by methane/hydrogen plasmas.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 145
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

1. Tzeng, Y., Kung, P.J., Zee, R., Legg, K., Legg, H.S., Burns, D., and Lou, B.H., Appl. Phys. Lett., 53 2326 (1988).Google Scholar
2. Hirose, Y. and Kondo, N., Program Book of Abstracts, 35th Japanese Applied Physics Spring Meeting, 434(1988).Google Scholar
3. Hanssen, L.M., Carrington, W.A., Butler, J.E., and Snail, K.A., Matls. Lett. 7, 289 (1988).Google Scholar
4. Carrington, W.A., Hanssen, L.M., Snail, K.A., Oakes, D.B., and Butler, J.E., Metal. Trans. 20A, 1282 (1989).Google Scholar
5. Tzeng, Y., Cutshaw, C., Phillips, R., and Srivinyunon, T., to appear in Appl. Phys. Lett., Jan. 8, 1990.Google Scholar
6. Landstrass, M.I. and Ravi, K.V., Appl. Phys. Lett. 55 (10), 975 (1989).Google Scholar
7. Landstrass, M.I. and Ravi, K.V., Appl. Phys. Lett. 55 (14), 1391 (1989).Google Scholar